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FIR18N50FG-VB Product details
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1. FIR18N50FG-VB Product Introduction
FIR18N50FG-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high-voltage power management applications. Its maximum drain-source voltage (VDS) is 650V, and the gate-source voltage (VGS) can withstand ±30V, with excellent voltage tolerance. The turn-on voltage (Vth) is 3.5V, and the on-resistance (RDS(ON)) is 160mΩ at a 10V gate drive. The device uses SJ_Multi-EPI technology, providing high voltage and high current handling capabilities, and is suitable for a variety of application scenarios requiring high voltage and high current.
FIR18N50FG-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high-voltage power management applications. Its maximum drain-source voltage (VDS) is 650V, and the gate-source voltage (VGS) can withstand ±30V, with excellent voltage tolerance. The turn-on voltage (Vth) is 3.5V, and the on-resistance (RDS(ON)) is 160mΩ at a 10V gate drive. The device uses SJ_Multi-EPI technology, providing high voltage and high current handling capabilities, and is suitable for a variety of application scenarios requiring high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FIR18N50FG-VB Detailed parameter description
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
3. Application fields and module examples of FIR18N50FG-VB
The high voltage and high current characteristics of FIR18N50FG-VB MOSFET make it excel in multiple fields and modules, including:
1. **High voltage power converter**: In high voltage power converters such as switching power supplies (SMPS), FIR18N50FG-VB is suitable for main switch and power regulation due to its high drain-source voltage of 650V and low on-resistance of 160mΩ, which can effectively handle high voltage input and reduce energy loss.
2. **Motor drive**: For motor drive applications that need to handle high currents, such as high power industrial motors or motor control for electric vehicles, FIR18N50FG-VB provides up to 20A of drain current capability, suitable for high current switching and current control.
3. **Lighting system**: In high-power LED driving or high-voltage lamp applications, FIR18N50FG-VB is able to handle high voltage loads, ensuring system stability and efficiency. Its high current capability and high voltage withstand characteristics make it suitable for lighting solutions that require high voltage protection.
4. **Power management system**: In various power management systems, such as inverters and power conditioning modules, FIR18N50FG-VB's SJ_Multi-EPI technology provides excellent high voltage and high current handling capabilities, suitable for industrial environments that require efficient and reliable power control.
The high voltage and high current characteristics of FIR18N50FG-VB MOSFET make it excel in multiple fields and modules, including:
1. **High voltage power converter**: In high voltage power converters such as switching power supplies (SMPS), FIR18N50FG-VB is suitable for main switch and power regulation due to its high drain-source voltage of 650V and low on-resistance of 160mΩ, which can effectively handle high voltage input and reduce energy loss.
2. **Motor drive**: For motor drive applications that need to handle high currents, such as high power industrial motors or motor control for electric vehicles, FIR18N50FG-VB provides up to 20A of drain current capability, suitable for high current switching and current control.
3. **Lighting system**: In high-power LED driving or high-voltage lamp applications, FIR18N50FG-VB is able to handle high voltage loads, ensuring system stability and efficiency. Its high current capability and high voltage withstand characteristics make it suitable for lighting solutions that require high voltage protection.
4. **Power management system**: In various power management systems, such as inverters and power conditioning modules, FIR18N50FG-VB's SJ_Multi-EPI technology provides excellent high voltage and high current handling capabilities, suitable for industrial environments that require efficient and reliable power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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