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FIR15N10LG-VB Product details
Back to previous pageProduct introduction：
1. FIR15N10LG-VB MOSFET Product Introduction
FIR15N10LG-VB is a high-performance N-channel MOSFET in TO-252 package. Designed for low and medium voltage applications, the device provides 100V withstand voltage capability, suitable for a variety of power switches and management circuits. It has a gate voltage range of ±20V and its turn-on voltage is 1.8V, ensuring good switching performance at low gate drive voltage. Its on-resistance is 114mΩ@VGS=10V, providing low switching losses and high current handling capability, suitable for applications requiring high efficiency and high current handling. Based on Trench technology, this MOSFET provides superior switching performance and stability.
FIR15N10LG-VB is a high-performance N-channel MOSFET in TO-252 package. Designed for low and medium voltage applications, the device provides 100V withstand voltage capability, suitable for a variety of power switches and management circuits. It has a gate voltage range of ±20V and its turn-on voltage is 1.8V, ensuring good switching performance at low gate drive voltage. Its on-resistance is 114mΩ@VGS=10V, providing low switching losses and high current handling capability, suitable for applications requiring high efficiency and high current handling. Based on Trench technology, this MOSFET provides superior switching performance and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. FIR15N10LG-VB MOSFET Detailed parameter description
1. **Package type**: TO-252
- The TO-252 package provides a compact size and good heat dissipation performance, suitable for small and medium-sized circuit boards.
2. **Channel configuration**: Single N-channel
- The single N-channel configuration makes this MOSFET perform well in high-efficiency switching applications.
3. **Drain-source voltage (VDS)**: 100V
- The maximum drain-source voltage is 100V, suitable for medium and low voltage power supplies and switching applications.
4. **Gate-source voltage (VGS)**: ±20V
- A gate voltage range of ±20V is provided to meet various drive voltage requirements.
5. **Throw-on voltage (Vth)**: 1.8V
- The lower turn-on voltage (1.8V) makes it suitable for low-voltage drive applications, improving system flexibility and efficiency.
6. **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- The 114mΩ on-resistance provides low switching losses and efficient current control.
7. **Drain current (ID)**: 15A
- The maximum drain current is 15A, suitable for medium current applications and capable of handling higher loads.
8. **Technology type**: Trench technology
- Trench technology improves switching speed and on-resistance, suitable for power management applications requiring high efficiency and high performance.
1. **Package type**: TO-252
- The TO-252 package provides a compact size and good heat dissipation performance, suitable for small and medium-sized circuit boards.
2. **Channel configuration**: Single N-channel
- The single N-channel configuration makes this MOSFET perform well in high-efficiency switching applications.
3. **Drain-source voltage (VDS)**: 100V
- The maximum drain-source voltage is 100V, suitable for medium and low voltage power supplies and switching applications.
4. **Gate-source voltage (VGS)**: ±20V
- A gate voltage range of ±20V is provided to meet various drive voltage requirements.
5. **Throw-on voltage (Vth)**: 1.8V
- The lower turn-on voltage (1.8V) makes it suitable for low-voltage drive applications, improving system flexibility and efficiency.
6. **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- The 114mΩ on-resistance provides low switching losses and efficient current control.
7. **Drain current (ID)**: 15A
- The maximum drain current is 15A, suitable for medium current applications and capable of handling higher loads.
8. **Technology type**: Trench technology
- Trench technology improves switching speed and on-resistance, suitable for power management applications requiring high efficiency and high performance.
Domain and module applications：
3. FIR15N10LG-VB Applications and Module Examples
1. **Switching Power Supply**:
- FIR15N10LG-VB is suitable for use in switching power supplies (SMPS), especially in applications with medium voltage and current requirements. Its low on-resistance and high current handling capability enable it to provide high efficiency and stability during power conversion.
2. **DC-DC Converter**:
- This MOSFET is ideal for use in DC-DC converters such as voltage regulator modules (VRMs) and buck converters. Its low turn-on voltage and low RDS(ON) characteristics help improve conversion efficiency and reduce power consumption.
3. **Motor Drive**:
- In motor drive applications, FIR15N10LG-VB is able to handle medium current switching requirements and is suitable for control systems for DC motors and stepper motors, providing smooth current switching and control.
4. **LED Driver**:
- The low on-resistance and high current capability of this MOSFET make it suitable for use in LED driver circuits, ensuring efficient current regulation and long life operation.
5. **Power Management Module**:
- FIR15N10LG-VB can be used in various power management modules, including battery management systems and power distribution circuits. Its excellent switching performance and high current handling capability improve the overall performance and reliability of the system.
Through these application areas, FIR15N10LG-VB shows its superior performance in medium and low voltage, high current environments, and is an ideal choice for various power switching and management circuits.
1. **Switching Power Supply**:
- FIR15N10LG-VB is suitable for use in switching power supplies (SMPS), especially in applications with medium voltage and current requirements. Its low on-resistance and high current handling capability enable it to provide high efficiency and stability during power conversion.
2. **DC-DC Converter**:
- This MOSFET is ideal for use in DC-DC converters such as voltage regulator modules (VRMs) and buck converters. Its low turn-on voltage and low RDS(ON) characteristics help improve conversion efficiency and reduce power consumption.
3. **Motor Drive**:
- In motor drive applications, FIR15N10LG-VB is able to handle medium current switching requirements and is suitable for control systems for DC motors and stepper motors, providing smooth current switching and control.
4. **LED Driver**:
- The low on-resistance and high current capability of this MOSFET make it suitable for use in LED driver circuits, ensuring efficient current regulation and long life operation.
5. **Power Management Module**:
- FIR15N10LG-VB can be used in various power management modules, including battery management systems and power distribution circuits. Its excellent switching performance and high current handling capability improve the overall performance and reliability of the system.
Through these application areas, FIR15N10LG-VB shows its superior performance in medium and low voltage, high current environments, and is an ideal choice for various power switching and management circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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