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FIR12N60AFG-VB Product details
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Product Introduction
**FIR12N60AFG-VB** is a single N-channel power MOSFET packaged in TO220F. Designed for high voltage applications, this MOSFET has a drain-source withstand voltage (VDS) of 650V, enabling it to handle switching and amplification tasks in high voltage environments. Its maximum gate-source voltage (VGS) is ±30V, providing sufficient safety margin. The threshold voltage (Vth) is 3.5V, ensuring that the MOSFET can be effectively turned on at a reasonable gate drive voltage. The on-resistance (RDS(ON)) of FIR12N60AFG-VB is 320mΩ@VGS=10V, and the relatively low on-resistance helps reduce power consumption and improve efficiency. Its maximum continuous drain current (ID) is 20A, which is suitable for applications handling medium to high power. Using planar process (Plannar) technology, FIR12N60AFG-VB is suitable for a variety of power switching and amplification applications.
**FIR12N60AFG-VB** is a single N-channel power MOSFET packaged in TO220F. Designed for high voltage applications, this MOSFET has a drain-source withstand voltage (VDS) of 650V, enabling it to handle switching and amplification tasks in high voltage environments. Its maximum gate-source voltage (VGS) is ±30V, providing sufficient safety margin. The threshold voltage (Vth) is 3.5V, ensuring that the MOSFET can be effectively turned on at a reasonable gate drive voltage. The on-resistance (RDS(ON)) of FIR12N60AFG-VB is 320mΩ@VGS=10V, and the relatively low on-resistance helps reduce power consumption and improve efficiency. Its maximum continuous drain current (ID) is 20A, which is suitable for applications handling medium to high power. Using planar process (Plannar) technology, FIR12N60AFG-VB is suitable for a variety of power switching and amplification applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: FIR12N60AFG-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 20A
- **Technology**: Plannar
- **Model**: FIR12N60AFG-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 20A
- **Technology**: Plannar
Domain and module applications：
Applications and Modules
1. **High-voltage Power Switch**: The high drain-source withstand voltage (650V) of the FIR12N60AFG-VB makes it ideal for high-voltage power switching applications such as switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). These applications require MOSFETs to switch reliably under high voltage conditions to provide stable power output.
2. **Motor Control**: Due to its high current capability (20A) and low on-resistance (320mΩ), the FIR12N60AFG-VB is suitable for motor drive circuits such as DC motor and stepper motor control. MOSFETs are able to effectively handle large current loads and provide smooth motor control.
3. **Power Converters**: In power converters such as DC-DC converters and power adapters, the low on-resistance and high withstand voltage characteristics of the FIR12N60AFG-VB make it an ideal choice. These modules require MOSFETs to provide efficient switching performance and stable voltage output during the conversion process.
4. **Voltage Regulator**: This MOSFET is suitable for use in high voltage voltage regulator circuits and can handle voltage regulation tasks at high voltages. Its high withstand voltage and relatively low on-resistance ensure the stability and efficiency of voltage regulation.
FIR12N60AFG-VB performs well in high voltage and medium to high current applications, and is particularly suitable for power electronic systems that require efficient switching, stable control and low power consumption.
1. **High-voltage Power Switch**: The high drain-source withstand voltage (650V) of the FIR12N60AFG-VB makes it ideal for high-voltage power switching applications such as switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). These applications require MOSFETs to switch reliably under high voltage conditions to provide stable power output.
2. **Motor Control**: Due to its high current capability (20A) and low on-resistance (320mΩ), the FIR12N60AFG-VB is suitable for motor drive circuits such as DC motor and stepper motor control. MOSFETs are able to effectively handle large current loads and provide smooth motor control.
3. **Power Converters**: In power converters such as DC-DC converters and power adapters, the low on-resistance and high withstand voltage characteristics of the FIR12N60AFG-VB make it an ideal choice. These modules require MOSFETs to provide efficient switching performance and stable voltage output during the conversion process.
4. **Voltage Regulator**: This MOSFET is suitable for use in high voltage voltage regulator circuits and can handle voltage regulation tasks at high voltages. Its high withstand voltage and relatively low on-resistance ensure the stability and efficiency of voltage regulation.
FIR12N60AFG-VB performs well in high voltage and medium to high current applications, and is particularly suitable for power electronic systems that require efficient switching, stable control and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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