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FIR10N80FG-VB Product details
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1. FIR10N80FG-VB Product Introduction
FIR10N80FG-VB is a high-voltage single N-channel MOSFET in TO220F package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 800V, and the gate-source voltage (VGS) can reach ±30V, with excellent voltage tolerance. The device has a turn-on voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 770mΩ at 10V gate drive. Manufactured using SJ_Multi-EPI technology, it provides excellent high-voltage performance and stability, and is suitable for a variety of high-voltage power management applications.
FIR10N80FG-VB is a high-voltage single N-channel MOSFET in TO220F package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 800V, and the gate-source voltage (VGS) can reach ±30V, with excellent voltage tolerance. The device has a turn-on voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 770mΩ at 10V gate drive. Manufactured using SJ_Multi-EPI technology, it provides excellent high-voltage performance and stability, and is suitable for a variety of high-voltage power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FIR10N80FG-VB Detailed parameter description
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 770mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 770mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
3. Application fields and module examples of FIR10N80FG-VB
The high voltage characteristics and moderate current handling capability of FIR10N80FG-VB MOSFET make it very suitable for the following fields and modules:
1. **High voltage power converter**: Due to its high drain-source voltage of 800V, FIR10N80FG-VB is very suitable for use in high voltage power converters, such as the main switch in a switching power supply (SMPS). This high voltage tolerance ensures stable operation in high voltage environments, and its low RDS(ON) helps reduce switching losses.
2. **Motor drive**: In applications that require high voltage motor drive, such as industrial motors or high voltage fans, the high VDS and high voltage withstand capability of FIR10N80FG-VB enable it to handle large current and voltage fluctuations while ensuring reliable operation of the motor.
3. **Lighting system**: In high-power LED drivers or high-voltage lamps, FIR10N80FG-VB is able to handle high-voltage loads, ensuring the stability and efficiency of the lighting system. Its high-voltage characteristics make it suitable for lighting applications that require high-voltage protection.
4. **Power management system**: In various power management systems, such as inverters and high-voltage power control modules, FIR10N80FG-VB's SJ_Multi-EPI technology provides excellent durability and high-voltage handling capabilities for demanding industrial environments.
The high voltage characteristics and moderate current handling capability of FIR10N80FG-VB MOSFET make it very suitable for the following fields and modules:
1. **High voltage power converter**: Due to its high drain-source voltage of 800V, FIR10N80FG-VB is very suitable for use in high voltage power converters, such as the main switch in a switching power supply (SMPS). This high voltage tolerance ensures stable operation in high voltage environments, and its low RDS(ON) helps reduce switching losses.
2. **Motor drive**: In applications that require high voltage motor drive, such as industrial motors or high voltage fans, the high VDS and high voltage withstand capability of FIR10N80FG-VB enable it to handle large current and voltage fluctuations while ensuring reliable operation of the motor.
3. **Lighting system**: In high-power LED drivers or high-voltage lamps, FIR10N80FG-VB is able to handle high-voltage loads, ensuring the stability and efficiency of the lighting system. Its high-voltage characteristics make it suitable for lighting applications that require high-voltage protection.
4. **Power management system**: In various power management systems, such as inverters and high-voltage power control modules, FIR10N80FG-VB's SJ_Multi-EPI technology provides excellent durability and high-voltage handling capabilities for demanding industrial environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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