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FIR10N65FG-VB Product details

Product introduction:

1. FIR10N65FG-VB Product Introduction

FIR10N65FG-VB is a high-voltage N-channel power MOSFET in TO220F package using planar technology. The MOSFET has a drain-source withstand voltage (VDS) of 650V, supports a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. Its on-resistance (RDS(ON)) is 830mΩ at VGS=10V, and its maximum drain current (ID) is 10A. The device is suitable for switching applications requiring high voltage and medium current, provides low conduction loss and high reliability, and is suitable for use in various power management and power control systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 10A 830mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 10A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 10A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. FIR10N65FG-VB Detailed parameter description

- **Model**: FIR10N65FG-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Planar technology
- **Switching characteristics**: Excellent switching performance, suitable for high frequency applications
- **Temperature range**: -55°C ~ 150°C (junction temperature)
- **Application environment**: For high voltage power management and power switching applications

Domain and module applications:

3. Application fields and modules of FIR10N65FG-VB

FIR10N65FG-VB is mainly suitable for the following fields and modules:

1. **Power converter**: Due to its high voltage withstand capability of 650V, FIR10N65FG-VB is suitable for high-voltage power converters such as AC-DC converters and DC-DC converters. These applications require stable switching operations at high voltages, and FIR10N65FG-VB can effectively reduce conduction losses and improve conversion efficiency.

2. **Power factor correction (PFC) circuit**: In power factor correction circuits, high voltage and high current switching operations need to be handled. The high voltage tolerance and moderate on-resistance of FIR10N65FG-VB make it an ideal choice in PFC modules, which can effectively improve the power factor and reduce system losses.

3. **Motor Driver**: In motor drivers, especially high-voltage drivers, the FIR10N65FG-VB can be used for high-voltage switch control, capable of stable operation at higher voltages and providing sufficient current to drive the motor. This makes it suitable for a variety of industrial and home appliance motor drive applications.

4. **Inverter**: The high voltage and high current capabilities of the FIR10N65FG-VB make it widely used in inverters. Inverters are used to convert DC power to AC power, and high-voltage switching devices are required in this process to ensure stable and efficient power conversion.

In short, the FIR10N65FG-VB is a high-voltage, high-reliability MOSFET suitable for a variety of high-voltage power supply and power switching applications, capable of providing stable performance and low switching losses in harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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