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FIR10N60AFG-VB Product details
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1. FIR10N60AFG-VB MOSFET Product Introduction
FIR10N60AFG-VB is a high-voltage N-channel MOSFET in a TO-220F package. It is designed for high voltage and medium current applications, providing a high withstand voltage capability of 650V, making it suitable for high voltage power supplies and switching devices. It has a gate voltage range of ±30V, allowing flexible driving conditions. Its on-resistance is 830mΩ@VGS=10V, providing effective current control and low power operation under high voltage conditions. This MOSFET is based on planar technology and has good electrical characteristics and reliability, making it suitable for a variety of industrial and consumer electronics applications.
FIR10N60AFG-VB is a high-voltage N-channel MOSFET in a TO-220F package. It is designed for high voltage and medium current applications, providing a high withstand voltage capability of 650V, making it suitable for high voltage power supplies and switching devices. It has a gate voltage range of ±30V, allowing flexible driving conditions. Its on-resistance is 830mΩ@VGS=10V, providing effective current control and low power operation under high voltage conditions. This MOSFET is based on planar technology and has good electrical characteristics and reliability, making it suitable for a variety of industrial and consumer electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FIR10N60AFG-VB MOSFET Detailed parameter description
1. **Package type**: TO-220F
- Provides excellent thermal management and electrical connections, suitable for applications that require good heat dissipation.
2. **Channel configuration**: Single N-channel
- N-channel MOSFET is suitable for high-voltage switching and power management applications, and can efficiently control the flow of current.
3. **Drain-source voltage (VDS)**: 650V
- Supports drain-source voltages up to 650V, suitable for high-voltage power and switching applications.
4. **Gate-source voltage (VGS)**: ±30V
- Wide gate voltage range allows stable operation under a variety of driving conditions.
5. **Turning point voltage (Vth)**: 3.5V
- The gate voltage can be turned on when it exceeds 3.5V, suitable for common control voltage ranges.
6. **On-resistance (RDS(ON))**: 830mΩ @ VGS=10V
- 830mΩ on-resistance provides lower power consumption and effective current control in high voltage applications.
7. **Drain current (ID)**: 10A
- Maximum drain current is 10A, suitable for medium current switching applications.
8. **Technology type**: Planar technology (Plannar)
- Planar technology provides stable electrical characteristics and high voltage resistance performance.
1. **Package type**: TO-220F
- Provides excellent thermal management and electrical connections, suitable for applications that require good heat dissipation.
2. **Channel configuration**: Single N-channel
- N-channel MOSFET is suitable for high-voltage switching and power management applications, and can efficiently control the flow of current.
3. **Drain-source voltage (VDS)**: 650V
- Supports drain-source voltages up to 650V, suitable for high-voltage power and switching applications.
4. **Gate-source voltage (VGS)**: ±30V
- Wide gate voltage range allows stable operation under a variety of driving conditions.
5. **Turning point voltage (Vth)**: 3.5V
- The gate voltage can be turned on when it exceeds 3.5V, suitable for common control voltage ranges.
6. **On-resistance (RDS(ON))**: 830mΩ @ VGS=10V
- 830mΩ on-resistance provides lower power consumption and effective current control in high voltage applications.
7. **Drain current (ID)**: 10A
- Maximum drain current is 10A, suitable for medium current switching applications.
8. **Technology type**: Planar technology (Plannar)
- Planar technology provides stable electrical characteristics and high voltage resistance performance.
Domain and module applications：
3. FIR10N60AFG-VB Applications and Module Examples
1. **High Voltage Power Supply Module**:
- Due to its 650V withstand voltage characteristics, the FIR10N60AFG-VB is ideal for use in high voltage power converters and regulators, such as industrial power supplies and power supply systems.
2. **Switching Power Supply**:
- This MOSFET can be used in switching power supplies (SMPS) to provide efficient current switching and control, especially in environments that require high voltage tolerance, such as power adapters and power modules.
3. **Motor Drive**:
- In motor drive applications, the FIR10N60AFG-VB can efficiently handle the high voltage and medium current requirements in motor starting and running, and is suitable for use in power tools and household appliances.
4. **Inverter**:
- This device is also suitable for use in inverters, especially in high voltage and high current control applications, providing stable switching and regulation capabilities to meet the needs of industrial inverters.
5. **Power Converter**:
- In various power converters, the high withstand voltage and medium current characteristics of the FIR10N60AFG-VB make it an effective switching element for applications such as solar inverters and high voltage chargers.
Through these application examples, the FIR10N60AFG-VB demonstrates its superior performance in high voltage and high current environments, suitable for various power electronic equipment and control systems.
1. **High Voltage Power Supply Module**:
- Due to its 650V withstand voltage characteristics, the FIR10N60AFG-VB is ideal for use in high voltage power converters and regulators, such as industrial power supplies and power supply systems.
2. **Switching Power Supply**:
- This MOSFET can be used in switching power supplies (SMPS) to provide efficient current switching and control, especially in environments that require high voltage tolerance, such as power adapters and power modules.
3. **Motor Drive**:
- In motor drive applications, the FIR10N60AFG-VB can efficiently handle the high voltage and medium current requirements in motor starting and running, and is suitable for use in power tools and household appliances.
4. **Inverter**:
- This device is also suitable for use in inverters, especially in high voltage and high current control applications, providing stable switching and regulation capabilities to meet the needs of industrial inverters.
5. **Power Converter**:
- In various power converters, the high withstand voltage and medium current characteristics of the FIR10N60AFG-VB make it an effective switching element for applications such as solar inverters and high voltage chargers.
Through these application examples, the FIR10N60AFG-VB demonstrates its superior performance in high voltage and high current environments, suitable for various power electronic equipment and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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