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FIBF20-VB Product details
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Product Introduction: FIBF20-VB
FIBF20-VB is a high-voltage N-channel power MOSFET in TO220F package, designed for applications requiring high voltage and lower current. Its maximum drain-source voltage (VDS) is 950V, suitable for high-voltage switching and power conversion applications. Although its on-resistance (RDS(ON)) is relatively high at 5400mΩ, the device can stably withstand a maximum drain current (ID) of 3A at a VGS of 10V. The withstand voltage of its gate voltage (VGS) is ±30V, and the threshold voltage (Vth) is 3.5V. Manufactured using a planar process (Planar), FIBF20-VB provides reliable electrical performance and stability, and is suitable for use in high-voltage applications.
FIBF20-VB is a high-voltage N-channel power MOSFET in TO220F package, designed for applications requiring high voltage and lower current. Its maximum drain-source voltage (VDS) is 950V, suitable for high-voltage switching and power conversion applications. Although its on-resistance (RDS(ON)) is relatively high at 5400mΩ, the device can stably withstand a maximum drain current (ID) of 3A at a VGS of 10V. The withstand voltage of its gate voltage (VGS) is ±30V, and the threshold voltage (Vth) is 3.5V. Manufactured using a planar process (Planar), FIBF20-VB provides reliable electrical performance and stability, and is suitable for use in high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 3A | 5400mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 3A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 3A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
- **Package type (Package): ** TO220F
- **Polarity configuration (Configuration): ** Single-N-Channel
- **Drain-source voltage (VDS): ** 950V
- **Gate voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 5400mΩ @ VGS = 10V
- **Maximum drain current (ID): ** 3A
- **Technology (Technology): ** Planar process (Planar)
- **Package type (Package): ** TO220F
- **Polarity configuration (Configuration): ** Single-N-Channel
- **Drain-source voltage (VDS): ** 950V
- **Gate voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 5400mΩ @ VGS = 10V
- **Maximum drain current (ID): ** 3A
- **Technology (Technology): ** Planar process (Planar)
Domain and module applications：
Application fields and module examples:
1. **High-voltage switching circuits:** FIBF20-VB is very suitable for high-voltage switching circuits, such as high-voltage power switches and power amplifiers, due to its high drain-source voltage of up to 950V. Despite the high on-resistance, its high withstand voltage capability enables it to handle applications that require high voltages.
2. **Power converters:** In some high-voltage power converters and power modules, FIBF20-VB can be used for switching operations that handle large voltages. Despite its large on-resistance, it can provide the necessary switching function in situations where high voltage withstand is required.
3. **Power management system:** This MOSFET is also suitable for power management systems, such as power protection circuits and current monitoring circuits. Its high voltage handling capability ensures reliable operation in high-voltage environments, although its on-resistance limits its use in low-current applications.
Through these application examples, the FIBF20-VB demonstrates its ability to handle high voltages and currents, although it may be limited by on-resistance in low current applications.
1. **High-voltage switching circuits:** FIBF20-VB is very suitable for high-voltage switching circuits, such as high-voltage power switches and power amplifiers, due to its high drain-source voltage of up to 950V. Despite the high on-resistance, its high withstand voltage capability enables it to handle applications that require high voltages.
2. **Power converters:** In some high-voltage power converters and power modules, FIBF20-VB can be used for switching operations that handle large voltages. Despite its large on-resistance, it can provide the necessary switching function in situations where high voltage withstand is required.
3. **Power management system:** This MOSFET is also suitable for power management systems, such as power protection circuits and current monitoring circuits. Its high voltage handling capability ensures reliable operation in high-voltage environments, although its on-resistance limits its use in low-current applications.
Through these application examples, the FIBF20-VB demonstrates its ability to handle high voltages and currents, although it may be limited by on-resistance in low current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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