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FIBC40G-VB Product details
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Product Introduction
**FIBC40G-VB** is a single N-channel power MOSFET in a TO220F package. The MOSFET has a drain-source withstand voltage (VDS) of 650V, making it suitable for high-voltage applications. Its maximum gate-source voltage (VGS) is ±30V, providing sufficient control voltage range. The threshold voltage (Vth) is 3.5V, ensuring effective switching at a reasonable gate drive voltage. The on-resistance (RDS(ON)) of FIBC40G-VB is 1100mΩ@VGS=10V, which is slightly higher than that of low on-resistance MOSFETs. Its maximum continuous drain current (ID) is 7A, which is suitable for medium-power applications. This MOSFET uses planar process (Plannar) technology and is suitable for use as a power component in high-voltage switching and amplifier applications.
**FIBC40G-VB** is a single N-channel power MOSFET in a TO220F package. The MOSFET has a drain-source withstand voltage (VDS) of 650V, making it suitable for high-voltage applications. Its maximum gate-source voltage (VGS) is ±30V, providing sufficient control voltage range. The threshold voltage (Vth) is 3.5V, ensuring effective switching at a reasonable gate drive voltage. The on-resistance (RDS(ON)) of FIBC40G-VB is 1100mΩ@VGS=10V, which is slightly higher than that of low on-resistance MOSFETs. Its maximum continuous drain current (ID) is 7A, which is suitable for medium-power applications. This MOSFET uses planar process (Plannar) technology and is suitable for use as a power component in high-voltage switching and amplifier applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: FIBC40G-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 7A
- **Technology**: Plannar
- **Model**: FIBC40G-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 7A
- **Technology**: Plannar
Domain and module applications：
Applications and Modules
1. **High Voltage Switching Circuits**: The high drain-source withstand voltage (650V) of FIBC40G-VB makes it particularly suitable for use in high voltage switching circuits, such as power management modules and power converters. These applications require switching operations under high voltage conditions, and MOSFETs are able to effectively control current and ensure stable operation.
2. **Motor Drive**: In motor drive applications, although the on-resistance of FIBC40G-VB is relatively high, its withstand voltage characteristics and moderate current capability allow it to be used in control circuits of medium power DC motors or stepper motors. These applications require MOSFETs to provide stable switching performance under current load.
3. **Power Amplifier**: In power amplifier circuits, the high voltage and medium current capabilities of FIBC40G-VB make it suitable for amplifying high voltage signals. Such circuits require MOSFETs that can withstand higher voltages while providing effective switching and amplification functions.
4. **High-voltage power modules**: Due to its 650V withstand voltage and high VGS limit, this MOSFET is suitable for high-voltage power modules such as DC-DC converters and power protection circuits. These modules usually need to work stably in a high-voltage environment, and FIBC40G-VB can effectively handle these requirements.
In summary, FIBC40G-VB is suitable for a variety of high-voltage, medium-power electronic applications, especially in scenarios that require high-voltage switching, amplification, and power management.
1. **High Voltage Switching Circuits**: The high drain-source withstand voltage (650V) of FIBC40G-VB makes it particularly suitable for use in high voltage switching circuits, such as power management modules and power converters. These applications require switching operations under high voltage conditions, and MOSFETs are able to effectively control current and ensure stable operation.
2. **Motor Drive**: In motor drive applications, although the on-resistance of FIBC40G-VB is relatively high, its withstand voltage characteristics and moderate current capability allow it to be used in control circuits of medium power DC motors or stepper motors. These applications require MOSFETs to provide stable switching performance under current load.
3. **Power Amplifier**: In power amplifier circuits, the high voltage and medium current capabilities of FIBC40G-VB make it suitable for amplifying high voltage signals. Such circuits require MOSFETs that can withstand higher voltages while providing effective switching and amplification functions.
4. **High-voltage power modules**: Due to its 650V withstand voltage and high VGS limit, this MOSFET is suitable for high-voltage power modules such as DC-DC converters and power protection circuits. These modules usually need to work stably in a high-voltage environment, and FIBC40G-VB can effectively handle these requirements.
In summary, FIBC40G-VB is suitable for a variety of high-voltage, medium-power electronic applications, especially in scenarios that require high-voltage switching, amplification, and power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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