中文
English
FIBC40GLC-VB Product details
Back to previous pageProduct introduction：
Product Introduction
FIBC40GLC-VB is a high voltage single N-channel MOSFET packaged in TO220F. This MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, suitable for high voltage applications. It uses planar process technology, has reliable thermal stability and switching performance, is designed for medium power applications, and provides excellent current control capabilities.
FIBC40GLC-VB is a high voltage single N-channel MOSFET packaged in TO220F. This MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, suitable for high voltage applications. It uses planar process technology, has reliable thermal stability and switching performance, is designed for medium power applications, and provides excellent current control capabilities.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Parameter Description
1. **Package Type**: TO220F
The TO220F package provides good heat dissipation and is suitable for use in circuits that require high current capability and insulation protection.
2. **Configuration**: Single-N-Channel
The single-N-Channel configuration ensures that the MOSFET has low conduction losses in switching circuits and is typically used for inductive or capacitive loads.
3. **Drain-Source Voltage (VDS)**: 650V
The 650V drain-source voltage is suitable for high-voltage converters and inverters, and can safely handle higher voltage inputs.
4. **Gate-Source Voltage (VGS)**: ±30V
The ±30V gate-source voltage increases the operating range of the device and enhances its adaptability in high-voltage applications.
5. **Gate Threshold Voltage (Vth)**: 3.5V
The 3.5V gate threshold voltage ensures that the MOSFET can be effectively turned on at a lower gate voltage, providing good circuit design flexibility.
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
The 1100mΩ on-resistance can reduce conduction losses at a gate voltage of 10V, which is suitable for medium-power design requirements.
7. **Maximum Drain Current (ID)**: 7A
The maximum drain current is 7A, which is suitable for medium-current applications and provides robust current handling capabilities.
8. **Technology Type**: Planar
Planar technology ensures that the device has good reliability and consistency, and is particularly suitable for mass production applications.
1. **Package Type**: TO220F
The TO220F package provides good heat dissipation and is suitable for use in circuits that require high current capability and insulation protection.
2. **Configuration**: Single-N-Channel
The single-N-Channel configuration ensures that the MOSFET has low conduction losses in switching circuits and is typically used for inductive or capacitive loads.
3. **Drain-Source Voltage (VDS)**: 650V
The 650V drain-source voltage is suitable for high-voltage converters and inverters, and can safely handle higher voltage inputs.
4. **Gate-Source Voltage (VGS)**: ±30V
The ±30V gate-source voltage increases the operating range of the device and enhances its adaptability in high-voltage applications.
5. **Gate Threshold Voltage (Vth)**: 3.5V
The 3.5V gate threshold voltage ensures that the MOSFET can be effectively turned on at a lower gate voltage, providing good circuit design flexibility.
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
The 1100mΩ on-resistance can reduce conduction losses at a gate voltage of 10V, which is suitable for medium-power design requirements.
7. **Maximum Drain Current (ID)**: 7A
The maximum drain current is 7A, which is suitable for medium-current applications and provides robust current handling capabilities.
8. **Technology Type**: Planar
Planar technology ensures that the device has good reliability and consistency, and is particularly suitable for mass production applications.
Domain and module applications：
Applicable fields and modules
FIBC40GLC-VB MOSFET is widely used in the following fields:
1. **Power conversion module**
In power conversion applications, this MOSFET can be used in AC-DC or DC-DC converters, especially where high voltage conversion is required. Its high withstand voltage and stable switching performance can significantly improve conversion efficiency and reduce power consumption.
2. **Industrial control system**
FIBC40GLC-VB is suitable for various industrial control systems, such as inverters and industrial motor drives. It can be used as a switching device to provide efficient current control and voltage conversion functions to ensure stable operation of the system.
3. **Lighting driver module**
This MOSFET performs well in LED lighting drive circuits, and is particularly suitable for driving and controlling high-voltage LED lamps. Its efficient switching performance ensures high brightness and low energy consumption of LED lighting.
4. **Smart Meter and Energy Management System**
In smart meter and energy management system, FIBC40GLC-VB can be used for switch and protection circuits to ensure the reliability and accuracy of the system, especially in high voltage environment.
FIBC40GLC-VB MOSFET is widely used in power conversion, industrial control, lighting drive and smart energy management due to its high voltage and high efficiency, providing a stable and reliable solution.
FIBC40GLC-VB MOSFET is widely used in the following fields:
1. **Power conversion module**
In power conversion applications, this MOSFET can be used in AC-DC or DC-DC converters, especially where high voltage conversion is required. Its high withstand voltage and stable switching performance can significantly improve conversion efficiency and reduce power consumption.
2. **Industrial control system**
FIBC40GLC-VB is suitable for various industrial control systems, such as inverters and industrial motor drives. It can be used as a switching device to provide efficient current control and voltage conversion functions to ensure stable operation of the system.
3. **Lighting driver module**
This MOSFET performs well in LED lighting drive circuits, and is particularly suitable for driving and controlling high-voltage LED lamps. Its efficient switching performance ensures high brightness and low energy consumption of LED lighting.
4. **Smart Meter and Energy Management System**
In smart meter and energy management system, FIBC40GLC-VB can be used for switch and protection circuits to ensure the reliability and accuracy of the system, especially in high voltage environment.
FIBC40GLC-VB MOSFET is widely used in power conversion, industrial control, lighting drive and smart energy management due to its high voltage and high efficiency, providing a stable and reliable solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
