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FIBC30G-VB Product details
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1. FIBC30G-VB Product Introduction
FIBC30G-VB is a high-voltage, single N-channel power MOSFET packaged in TO220F and using planar process technology. The device has a drain-source withstand voltage (VDS) of 650V, can operate at a gate-source voltage (VGS) of 30V (±V), and a threshold voltage (Vth) of 3.5V. Its on-resistance (RDS(ON)) is 2560mΩ at VGS=10V, and the maximum drain current (ID) is 4A. This MOSFET has excellent switching performance and reliability, and is suitable for a variety of applications requiring high-voltage switching.
FIBC30G-VB is a high-voltage, single N-channel power MOSFET packaged in TO220F and using planar process technology. The device has a drain-source withstand voltage (VDS) of 650V, can operate at a gate-source voltage (VGS) of 30V (±V), and a threshold voltage (Vth) of 3.5V. Its on-resistance (RDS(ON)) is 2560mΩ at VGS=10V, and the maximum drain current (ID) is 4A. This MOSFET has excellent switching performance and reliability, and is suitable for a variety of applications requiring high-voltage switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FIBC30G-VB Detailed parameter description
- **Model**: FIBC30G-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS=10V
- **Drain current (ID)**: 4A
- **Technology**: Planar technology
- **Switching characteristics**: With good switching speed and low switching loss
- **Temperature range**: -55°C ~ 150°C (junction temperature)
- **Application environment**: High voltage power management system, AC-DC converter, PFC circuit, etc.
- **Model**: FIBC30G-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS=10V
- **Drain current (ID)**: 4A
- **Technology**: Planar technology
- **Switching characteristics**: With good switching speed and low switching loss
- **Temperature range**: -55°C ~ 150°C (junction temperature)
- **Application environment**: High voltage power management system, AC-DC converter, PFC circuit, etc.
Domain and module applications：
III. FIBC30G-VB Applicable Fields and Modules
FIBC30G-VB is mainly used in the following fields and modules:
1. **Power Management System**: Due to its high drain-source withstand voltage of 650V and excellent switching performance, FIBC30G-VB is particularly suitable for power management systems that require efficient energy transmission. It can handle high voltage input and maintain high efficiency during switching, and is suitable for use as a switching element in AC-DC power adapters.
2. **PFC (Power Factor Correction) Circuit**: In the power supply system, the PFC module needs to handle high voltage and reduce current harmonics. FIBC30G-VB can work effectively in such high voltage occasions to ensure system stability and power factor optimization.
3. **Industrial Automation Equipment**: This MOSFET is also widely used in high-voltage control modules of industrial automation equipment, especially in scenarios that require reliable high-voltage switch control, such as motor drives and automation control units.
4. **Inverter and frequency converter**: FIBC30G-VB's high voltage tolerance and good thermal stability make it an ideal choice in inverter and frequency converter, capable of handling fast switching operations under high voltage and ensuring system stability and efficiency.
In summary, FIBC30G-VB is a high reliability MOSFET suitable for high voltage power management and switching applications, widely used in power electronic equipment and industrial control systems.
FIBC30G-VB is mainly used in the following fields and modules:
1. **Power Management System**: Due to its high drain-source withstand voltage of 650V and excellent switching performance, FIBC30G-VB is particularly suitable for power management systems that require efficient energy transmission. It can handle high voltage input and maintain high efficiency during switching, and is suitable for use as a switching element in AC-DC power adapters.
2. **PFC (Power Factor Correction) Circuit**: In the power supply system, the PFC module needs to handle high voltage and reduce current harmonics. FIBC30G-VB can work effectively in such high voltage occasions to ensure system stability and power factor optimization.
3. **Industrial Automation Equipment**: This MOSFET is also widely used in high-voltage control modules of industrial automation equipment, especially in scenarios that require reliable high-voltage switch control, such as motor drives and automation control units.
4. **Inverter and frequency converter**: FIBC30G-VB's high voltage tolerance and good thermal stability make it an ideal choice in inverter and frequency converter, capable of handling fast switching operations under high voltage and ensuring system stability and efficiency.
In summary, FIBC30G-VB is a high reliability MOSFET suitable for high voltage power management and switching applications, widely used in power electronic equipment and industrial control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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