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FIBC20G-VB Product details
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1. FIBC20G-VB MOSFET Product Introduction
FIBC20G-VB is a high voltage N-channel MOSFET based on planar technology, packaged in TO-220F. The device has high voltage resistance, VDS up to 650V, suitable for various high voltage power supply and converter applications. Its gate voltage VGS is ±30V, ensuring stable operation at higher voltages. Although its RDS(ON) is relatively high at 1700mΩ@VGS=10V, it still has good switching characteristics and is suitable for low power high voltage switching applications.
FIBC20G-VB is a high voltage N-channel MOSFET based on planar technology, packaged in TO-220F. The device has high voltage resistance, VDS up to 650V, suitable for various high voltage power supply and converter applications. Its gate voltage VGS is ±30V, ensuring stable operation at higher voltages. Although its RDS(ON) is relatively high at 1700mΩ@VGS=10V, it still has good switching characteristics and is suitable for low power high voltage switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FIBC20G-VB MOSFET Detailed parameter description
1. **Package type**: TO-220F
- The TO-220F package provides excellent thermal performance and is suitable for applications that require good heat dissipation capabilities.
2. **Channel configuration**: Single N-channel
- This configuration enables the MOSFET to be used as an efficient switch in high-voltage applications.
3. **Drain-source voltage (VDS)**: 650V
- This parameter indicates the maximum drain-source voltage that the MOSFET can withstand, suitable for use in high-voltage power supplies and converters.
4. **Gate-source voltage (VGS)**: ±30V
- The wide range of gate voltage provides flexible control, enabling it to adapt to different drive voltage requirements.
5. **Throw Voltage(Vth)**: 3.5V
- The turn-on voltage indicates the voltage that the gate needs to exceed to turn on. The 3.5V threshold enables stable operation in most applications.
6. **On-resistance(RDS(ON))**: 1700mΩ @ VGS=10V
- The higher on-resistance makes this MOSFET suitable for low current but high voltage applications.
7. **Drain Current(ID)**: 2A
- The maximum drain current is 2A, which is suitable for low power applications.
8. **Technology Type**: Planar Technology
- Planar technology provides good voltage resistance and reliability in high voltage applications.
1. **Package type**: TO-220F
- The TO-220F package provides excellent thermal performance and is suitable for applications that require good heat dissipation capabilities.
2. **Channel configuration**: Single N-channel
- This configuration enables the MOSFET to be used as an efficient switch in high-voltage applications.
3. **Drain-source voltage (VDS)**: 650V
- This parameter indicates the maximum drain-source voltage that the MOSFET can withstand, suitable for use in high-voltage power supplies and converters.
4. **Gate-source voltage (VGS)**: ±30V
- The wide range of gate voltage provides flexible control, enabling it to adapt to different drive voltage requirements.
5. **Throw Voltage(Vth)**: 3.5V
- The turn-on voltage indicates the voltage that the gate needs to exceed to turn on. The 3.5V threshold enables stable operation in most applications.
6. **On-resistance(RDS(ON))**: 1700mΩ @ VGS=10V
- The higher on-resistance makes this MOSFET suitable for low current but high voltage applications.
7. **Drain Current(ID)**: 2A
- The maximum drain current is 2A, which is suitable for low power applications.
8. **Technology Type**: Planar Technology
- Planar technology provides good voltage resistance and reliability in high voltage applications.
Domain and module applications：
III. FIBC20G-VB Applications and Module Examples
1. **High Voltage Power Supply**:
- The 650V high withstand voltage characteristic of this MOSFET makes it excel in high voltage power supply modules. It can be used in high voltage power converters in industrial control systems, as well as switching power supplies in household appliances.
2. **Lighting System**:
- FIBC20G-VB can be applied in LED drivers, especially in applications where high voltage drive is required, such as outdoor lighting and industrial lighting.
3. **Motor Control**:
- Although the current capacity of this device is limited, it can still be used as an effective switching element in small high voltage motor control, especially in applications that require fast switching and high voltage control.
4. **Inverter**:
- Due to its high voltage capability, FIBC20G-VB is also suitable for use in inverters, especially those used to drive high voltage AC motors.
With these features and application scenarios, FIBC20G-VB becomes the ideal choice for high voltage, low current applications, and is suitable for use in various power electronic modules that require high voltage switching and control.
1. **High Voltage Power Supply**:
- The 650V high withstand voltage characteristic of this MOSFET makes it excel in high voltage power supply modules. It can be used in high voltage power converters in industrial control systems, as well as switching power supplies in household appliances.
2. **Lighting System**:
- FIBC20G-VB can be applied in LED drivers, especially in applications where high voltage drive is required, such as outdoor lighting and industrial lighting.
3. **Motor Control**:
- Although the current capacity of this device is limited, it can still be used as an effective switching element in small high voltage motor control, especially in applications that require fast switching and high voltage control.
4. **Inverter**:
- Due to its high voltage capability, FIBC20G-VB is also suitable for use in inverters, especially those used to drive high voltage AC motors.
With these features and application scenarios, FIBC20G-VB becomes the ideal choice for high voltage, low current applications, and is suitable for use in various power electronic modules that require high voltage switching and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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