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FIB8N50K-VB Product details
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1. Product Introduction
FIB8N50K-VB is a high voltage single N-channel MOSFET in TO220F package with 550V breakdown voltage and 260mΩ on-resistance, designed for applications requiring high voltage resistance and high efficiency. The device is manufactured using planar technology and has high current handling capability and good thermal management performance, making it an ideal choice for high voltage applications such as power management and motor drive.
FIB8N50K-VB is a high voltage single N-channel MOSFET in TO220F package with 550V breakdown voltage and 260mΩ on-resistance, designed for applications requiring high voltage resistance and high efficiency. The device is manufactured using planar technology and has high current handling capability and good thermal management performance, making it an ideal choice for high voltage applications such as power management and motor drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description
- **Model**: FIB8N50K-VB
- **Package type**: TO220F
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Planar technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation**: 75W
- **Model**: FIB8N50K-VB
- **Package type**: TO220F
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Planar technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation**: 75W
Domain and module applications：
3. Application fields and module examples
1. **Power management**: FIB8N50K-VB is suitable for the main power switch in the switch mode power supply (SMPS). Its high withstand voltage characteristics enable it to withstand input voltage fluctuations and provide reliable switching performance in high-voltage applications.
2. **Motor drive**: In the motor drive module, the device can be used to control the switching operation of the DC motor or brushless DC motor (BLDC), providing high-efficiency power conversion and reducing system losses.
3. **Photovoltaic inverter**: This MOSFET can be used in photovoltaic inverters to convert DC power generated by solar energy into AC power. Its high withstand voltage and high efficiency make it suitable for high reliability and long life in these environments.
4. **UPS system**: In the uninterruptible power supply (UPS), FIB8N50K-VB can be used for power switching devices on the high-voltage side to help ensure fast response when power fluctuates or interrupts, and provide stable power output.
From the above application examples, it can be seen that the FIB8N50K-VB MOSFET can perform well in a variety of high-voltage and high-efficiency applications to meet industrial-grade power conversion and control needs.
1. **Power management**: FIB8N50K-VB is suitable for the main power switch in the switch mode power supply (SMPS). Its high withstand voltage characteristics enable it to withstand input voltage fluctuations and provide reliable switching performance in high-voltage applications.
2. **Motor drive**: In the motor drive module, the device can be used to control the switching operation of the DC motor or brushless DC motor (BLDC), providing high-efficiency power conversion and reducing system losses.
3. **Photovoltaic inverter**: This MOSFET can be used in photovoltaic inverters to convert DC power generated by solar energy into AC power. Its high withstand voltage and high efficiency make it suitable for high reliability and long life in these environments.
4. **UPS system**: In the uninterruptible power supply (UPS), FIB8N50K-VB can be used for power switching devices on the high-voltage side to help ensure fast response when power fluctuates or interrupts, and provide stable power output.
From the above application examples, it can be seen that the FIB8N50K-VB MOSFET can perform well in a variety of high-voltage and high-efficiency applications to meet industrial-grade power conversion and control needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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