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FIB7N50L-VB Product details

Product introduction:

FIB7N50L-VB MOSFET Product Introduction

The FIB7N50L-VB is a high-voltage single-channel N-channel power MOSFET in a TO220F package with a withstand voltage of 550V and a continuous drain current of 18A. Based on planar process technology, the device has stable performance and low on-resistance (RDS(ON) = 260mΩ @ VGS = 10V), and can provide efficient power switching functions in a higher voltage environment. Its Vth (gate threshold voltage) is 3V, which can ensure that the MOSFET can be reliably turned on at a lower gate drive voltage. In addition, the device has a VGS range of ±30V, which enhances its noise immunity and reliability in different application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 550V 3V 18A 260mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 550V 3V 18A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 550V 3V 18A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
FIB7N50L-VB MOSFET Detailed parameter description

- **Model**: FIB7N50L-VB
- **Package**: TO220F
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Planar technology
- **Operating temperature range**: -55°C to +150°C
- **Power consumption (Ptot)**: 45W

Domain and module applications:

FIB7N50L-VB Applications and Module Examples

1. **Power Management Module**: The FIB7N50L-VB is suitable for high voltage power management applications such as switch mode power supplies (SMPS) and high efficiency DC-DC converters. Its high withstand voltage capability makes it suitable for use in applications requiring high isolation voltage, such as LED lighting driver circuits and industrial power modules.

2. **Motor Drive Control**: In industrial motor drives and home appliances, the FIB7N50L-VB can be used in inverter circuits to provide reliable current control and switching capabilities. Its low on-resistance can reduce power losses and improve system efficiency.

3. **High Voltage Power Amplifier**: In audio and RF power amplifiers that need to handle high voltages, the FIB7N50L-VB can provide efficient power amplification while maintaining low distortion.

4. **Inverter circuit**: In photovoltaic systems and UPS systems, FIB7N50L-VB can be used in high-voltage inverter circuits to help achieve efficient conversion of DC to AC and provide stable power output.

Through these application examples, it can be seen that FIB7N50L-VB has a wide range of applicability in multiple high-voltage power processing scenarios and is an efficient and reliable MOSFET choice.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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