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FIB7N50A-VB Product details
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Product Introduction: FIB7N50A-VB
FIB7N50A-VB is a high-performance N-channel power MOSFET in TO220F package, suitable for various high-voltage applications. The device can withstand drain-source voltage (VDS) up to 550V and has a low on-resistance (RDS(ON)), which is only 260mΩ at VGS of 10V. This makes it particularly suitable for use in high-efficiency power conversion and switching circuits. Its gate voltage (VGS) withstand voltage is ±30V, providing good switching performance and reliability. Due to the use of planar process, FIB7N50A-VB has excellent thermal stability and durability, and is an ideal choice for a wide range of applications in the industrial field.
FIB7N50A-VB is a high-performance N-channel power MOSFET in TO220F package, suitable for various high-voltage applications. The device can withstand drain-source voltage (VDS) up to 550V and has a low on-resistance (RDS(ON)), which is only 260mΩ at VGS of 10V. This makes it particularly suitable for use in high-efficiency power conversion and switching circuits. Its gate voltage (VGS) withstand voltage is ±30V, providing good switching performance and reliability. Due to the use of planar process, FIB7N50A-VB has excellent thermal stability and durability, and is an ideal choice for a wide range of applications in the industrial field.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
- **Package type (Package): ** TO220F
- **Polarity configuration (Configuration): ** Single-N-Channel
- **Drain-source voltage (VDS): ** 550V
- **Gate voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3V
- **On-resistance (RDS(ON)): ** 260mΩ @ VGS = 10V
- **Maximum drain current (ID): ** 18A
- **Technology (Technology): ** Planar process (Planar)
- **Package type (Package): ** TO220F
- **Polarity configuration (Configuration): ** Single-N-Channel
- **Drain-source voltage (VDS): ** 550V
- **Gate voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3V
- **On-resistance (RDS(ON)): ** 260mΩ @ VGS = 10V
- **Maximum drain current (ID): ** 18A
- **Technology (Technology): ** Planar process (Planar)
Domain and module applications：
Application fields and module examples:
1. **Power conversion module:** FIB7N50A-VB is particularly suitable for use in high-efficiency power conversion circuits, such as AC-DC power supplies, DC-DC converters, etc. Due to its high withstand voltage and low on-resistance, it can effectively improve the efficiency of power conversion and reduce power consumption.
2. **Switching circuit:** This MOSFET performs well in high-voltage switching circuits and is suitable for motor drives, industrial control circuits and other occasions that require high-voltage switching components. Its planar process provides good thermal management capabilities, allowing it to maintain stable operation in high-temperature environments.
3. **Inverter:** In inverter applications, FIB7N50A-VB can handle high-voltage and high-current switching operations, making it ideal for use in solar inverters and uninterruptible power supply (UPS) systems. Its high voltage withstand capability and robust structure ensure reliability in these critical applications.
1. **Power conversion module:** FIB7N50A-VB is particularly suitable for use in high-efficiency power conversion circuits, such as AC-DC power supplies, DC-DC converters, etc. Due to its high withstand voltage and low on-resistance, it can effectively improve the efficiency of power conversion and reduce power consumption.
2. **Switching circuit:** This MOSFET performs well in high-voltage switching circuits and is suitable for motor drives, industrial control circuits and other occasions that require high-voltage switching components. Its planar process provides good thermal management capabilities, allowing it to maintain stable operation in high-temperature environments.
3. **Inverter:** In inverter applications, FIB7N50A-VB can handle high-voltage and high-current switching operations, making it ideal for use in solar inverters and uninterruptible power supply (UPS) systems. Its high voltage withstand capability and robust structure ensure reliability in these critical applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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