FIB5N65A-VB Product details
Product introduction:
**FIB5N65A-VB** is a single N-channel power MOSFET in TO220F package. This MOSFET has a drain-source withstand voltage (VDS) of 650V, which is suitable for high voltage applications. Its maximum gate-source voltage (VGS) is ±30V, ensuring sufficient safety margin in the control circuit. The threshold voltage (Vth) of this MOSFET is 3.5V, which provides good flexibility in driving requirements. Its on-resistance (RDS(ON)) is 830mΩ@VGS=10V, providing a relatively low on-resistance, thereby reducing power consumption. The maximum continuous drain current (ID) is 10A, which is suitable for applications with medium power requirements. The device uses planar process (Plannar) technology and is suitable for various high-voltage power switching and linear amplification applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: FIB5N65A-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 10A
- **Technology**: Plannar
Domain and module applications:
1. **High-voltage Power Management**: The high drain-source withstand voltage (650V) of the FIB5N65A-VB makes it ideal for use in high-voltage power management systems, such as switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). In these applications, the MOSFET is able to reliably handle switching operations at high voltages.
2. **Motor Drive**: Due to its high withstand voltage and moderate on-resistance, the FIB5N65A-VB is suitable for use in motor drive circuits, especially in scenarios where high-voltage DC motors or stepper motors need to be controlled. These circuits require the MOSFET to operate stably under high voltage conditions while providing effective switching control.
3. **Power Conversion Module**: In power conversion modules, such as DC-DC converters, the low on-resistance and high withstand voltage characteristics of the FIB5N65A-VB make it a suitable choice. Such applications require the MOSFET to withstand high voltages and currents during the conversion process while minimizing energy losses.
4. **Voltage Regulator**: Due to its high gate-source maximum voltage (±30V), this MOSFET can be used in high voltage voltage regulator circuits to provide a stable output voltage and effectively regulate the voltage level.
From the above application examples, it can be seen that FIB5N65A-VB is mainly suitable for high voltage and high current power electronics applications, suitable for various scenarios requiring high voltage switching and high reliability.
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