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FI9Z34-VB Product details
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FI9Z34-VB MOSFET Product Introduction
FI9Z34-VB is a unipolar P-channel MOSFET packaged in TO220F, suitable for medium voltage and high current applications. The drain-source voltage (VDS) of this MOSFET is -60V and the gate-source voltage (VGS) is ±20V, which can adapt to a variety of driving voltage environments. Its threshold voltage (Vth) is -1.7V, ensuring that it can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) is 120mΩ at VGS=4.5V and 100mΩ at VGS=10V, providing lower conduction losses. The maximum drain current (ID) is -20A, which is suitable for applications with high current loads. FI9Z34-VB uses advanced trench technology to provide excellent switching performance and efficient current control.
FI9Z34-VB is a unipolar P-channel MOSFET packaged in TO220F, suitable for medium voltage and high current applications. The drain-source voltage (VDS) of this MOSFET is -60V and the gate-source voltage (VGS) is ±20V, which can adapt to a variety of driving voltage environments. Its threshold voltage (Vth) is -1.7V, ensuring that it can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) is 120mΩ at VGS=4.5V and 100mΩ at VGS=10V, providing lower conduction losses. The maximum drain current (ID) is -20A, which is suitable for applications with high current loads. FI9Z34-VB uses advanced trench technology to provide excellent switching performance and efficient current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
Detailed parameter description
1. **Package type**: TO220F
- The TO220F package has good thermal management capabilities and is suitable for effective heat dissipation in high power applications.
2. **Configuration**: Unipolar P-channel
- This is a unipolar P-channel type MOSFET suitable for switching applications that require negative current flow.
3. **Drain-Source Voltage (VDS)**: -60V
- This MOSFET can withstand a maximum drain-source voltage of -60V, suitable for medium voltage circuits.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum allowed gate-source voltage is ±20V, providing flexible gate drive voltage selection.
5. **Threshold Voltage (Vth)**: -1.7V
- The threshold voltage is -1.7V, which indicates the minimum gate voltage required to turn on the MOSFET.
6. **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- Under different gate voltages, the on-resistance is 120mΩ and 100mΩ respectively, which can provide low conduction loss and is suitable for high-efficiency applications.
7. **Drain Current (ID)**: -20A
- The maximum drain current is -20A, which is suitable for switching applications with large current loads.
8. **Technology**: Trench Technology
- Using advanced trench technology, it has low gate charge and excellent switching performance, which is suitable for efficient current control needs.
1. **Package type**: TO220F
- The TO220F package has good thermal management capabilities and is suitable for effective heat dissipation in high power applications.
2. **Configuration**: Unipolar P-channel
- This is a unipolar P-channel type MOSFET suitable for switching applications that require negative current flow.
3. **Drain-Source Voltage (VDS)**: -60V
- This MOSFET can withstand a maximum drain-source voltage of -60V, suitable for medium voltage circuits.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum allowed gate-source voltage is ±20V, providing flexible gate drive voltage selection.
5. **Threshold Voltage (Vth)**: -1.7V
- The threshold voltage is -1.7V, which indicates the minimum gate voltage required to turn on the MOSFET.
6. **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- Under different gate voltages, the on-resistance is 120mΩ and 100mΩ respectively, which can provide low conduction loss and is suitable for high-efficiency applications.
7. **Drain Current (ID)**: -20A
- The maximum drain current is -20A, which is suitable for switching applications with large current loads.
8. **Technology**: Trench Technology
- Using advanced trench technology, it has low gate charge and excellent switching performance, which is suitable for efficient current control needs.
Domain and module applications：
Application Examples
The medium voltage and high current characteristics of the FI9Z34-VB MOSFET make it suitable for multiple fields and modules:
1. **Power Management**:
- This MOSFET performs well in power management applications and is suitable for power conversion devices such as battery management systems and DC-DC converters. It can handle high current loads with low conduction losses, ensuring efficient operation of the system.
2. **Motor Control**:
- In motor control applications, the FI9Z34-VB can be used to drive high current motors, especially in scenarios where reverse current control is required. Its high current carrying capacity and low on-resistance help improve the efficiency and reliability of motor drive systems.
3. **Switching Power Supply**:
- This MOSFET is also suitable for efficient switching operations in switching power supplies. Its low on-resistance and high current capability make it an ideal choice for designing low-loss, high-efficiency switching power supplies.
4. **Power Tools and Appliances**:
- FI9Z34-VB plays a key role in power control modules for power tools and appliances, carrying high currents and providing reliable switching performance, allowing the equipment to operate efficiently and energy-efficiently.
These application examples demonstrate the wide applicability of FI9Z34-VB in a variety of high current and medium voltage applications, suitable for electronic designs that require efficient switching and current control.
The medium voltage and high current characteristics of the FI9Z34-VB MOSFET make it suitable for multiple fields and modules:
1. **Power Management**:
- This MOSFET performs well in power management applications and is suitable for power conversion devices such as battery management systems and DC-DC converters. It can handle high current loads with low conduction losses, ensuring efficient operation of the system.
2. **Motor Control**:
- In motor control applications, the FI9Z34-VB can be used to drive high current motors, especially in scenarios where reverse current control is required. Its high current carrying capacity and low on-resistance help improve the efficiency and reliability of motor drive systems.
3. **Switching Power Supply**:
- This MOSFET is also suitable for efficient switching operations in switching power supplies. Its low on-resistance and high current capability make it an ideal choice for designing low-loss, high-efficiency switching power supplies.
4. **Power Tools and Appliances**:
- FI9Z34-VB plays a key role in power control modules for power tools and appliances, carrying high currents and providing reliable switching performance, allowing the equipment to operate efficiently and energy-efficiently.
These application examples demonstrate the wide applicability of FI9Z34-VB in a variety of high current and medium voltage applications, suitable for electronic designs that require efficient switching and current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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