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FI9Z24N-VB Product details
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FI9Z24N-VB MOSFET Product Introduction
FI9Z24N-VB is a P-channel MOSFET in TO220F package, designed for low voltage, high current applications. Its drain-source voltage (VDS) is -60V, suitable for robust operation in medium and low voltage environments. The gate-source voltage (VGS) range is ±20V, supporting a wide gate drive voltage range. The threshold voltage (Vth) of the device is -1.7V, ensuring reliable switching operation under low gate drive. The on-resistance (RDS(ON)) is 120mΩ@VGS=4.5V and 100mΩ@VGS=10V respectively, with low conduction losses, making it perform well in medium current applications. Manufactured using Trench technology, this MOSFET has excellent switching performance and high efficiency, and is widely used in many power control and conversion fields.
FI9Z24N-VB is a P-channel MOSFET in TO220F package, designed for low voltage, high current applications. Its drain-source voltage (VDS) is -60V, suitable for robust operation in medium and low voltage environments. The gate-source voltage (VGS) range is ±20V, supporting a wide gate drive voltage range. The threshold voltage (Vth) of the device is -1.7V, ensuring reliable switching operation under low gate drive. The on-resistance (RDS(ON)) is 120mΩ@VGS=4.5V and 100mΩ@VGS=10V respectively, with low conduction losses, making it perform well in medium current applications. Manufactured using Trench technology, this MOSFET has excellent switching performance and high efficiency, and is widely used in many power control and conversion fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
FI9Z24N-VB MOSFET Detailed parameter description
- **Package type**: TO220F
- **Polarity configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **Drain current (ID)**: -20A
- **Technology type**: Trench
- **Gate charge (Qg)**: Low gate charge, suitable for high-efficiency switching applications
- **Thermal resistance**: Optimized thermal resistance design to support high power handling
- **Operating temperature range**: -55°C Up to +150°C
- **Package type**: TO220F
- **Polarity configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **Drain current (ID)**: -20A
- **Technology type**: Trench
- **Gate charge (Qg)**: Low gate charge, suitable for high-efficiency switching applications
- **Thermal resistance**: Optimized thermal resistance design to support high power handling
- **Operating temperature range**: -55°C Up to +150°C
Domain and module applications：
FI9Z24N-VB MOSFET Applications and Modules
FI9Z24N-VB MOSFET is widely used in the following fields due to its low on-resistance and high current handling capability:
1. **DC-DC Converter**: FI9Z24N-VB performs well in medium and low voltage power management applications, especially in DC-DC converters, where its low on-resistance and P-channel characteristics enable it to provide efficient power transmission in buck converters.
2. **Power Tools**: In the field of power tools, this MOSFET is able to handle higher transient currents and provide stable switching operations, helping to improve the energy efficiency and durability of the tools.
3. **Battery Management System**: FI9Z24N-VB is suitable for discharge control and protection circuits in battery management systems, using its P-channel characteristics to provide stable performance in battery reverse protection and power switches.
4. **Automotive electronics**: In automotive electronics, FI9Z24N-VB can be used in control modules such as power windows and power seats to provide reliable power control and protection functions to ensure the safety and stability of the system.
In summary, FI9Z24N-VB MOSFET, with its low on-resistance, P-channel configuration and Trench technology, is suitable for DC-DC converters, power tools, battery management systems, automotive electronics and other fields, providing efficient and stable power control solutions.
FI9Z24N-VB MOSFET is widely used in the following fields due to its low on-resistance and high current handling capability:
1. **DC-DC Converter**: FI9Z24N-VB performs well in medium and low voltage power management applications, especially in DC-DC converters, where its low on-resistance and P-channel characteristics enable it to provide efficient power transmission in buck converters.
2. **Power Tools**: In the field of power tools, this MOSFET is able to handle higher transient currents and provide stable switching operations, helping to improve the energy efficiency and durability of the tools.
3. **Battery Management System**: FI9Z24N-VB is suitable for discharge control and protection circuits in battery management systems, using its P-channel characteristics to provide stable performance in battery reverse protection and power switches.
4. **Automotive electronics**: In automotive electronics, FI9Z24N-VB can be used in control modules such as power windows and power seats to provide reliable power control and protection functions to ensure the safety and stability of the system.
In summary, FI9Z24N-VB MOSFET, with its low on-resistance, P-channel configuration and Trench technology, is suitable for DC-DC converters, power tools, battery management systems, automotive electronics and other fields, providing efficient and stable power control solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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