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FI840G-VB Product details
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FI840G-VB MOSFET Product Introduction
FI840G-VB is a high voltage single channel N-type MOSFET in TO220F package, which is particularly suitable for high voltage and high current applications. Designed for scenarios requiring high voltage resistance and robust current control, this MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. FI840G-VB adopts Plannar technology, which can provide reliable conductance and high power handling capabilities. It is widely used in power electronic equipment to meet the needs of high voltage and high current.
FI840G-VB is a high voltage single channel N-type MOSFET in TO220F package, which is particularly suitable for high voltage and high current applications. Designed for scenarios requiring high voltage resistance and robust current control, this MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. FI840G-VB adopts Plannar technology, which can provide reliable conductance and high power handling capabilities. It is widely used in power electronic equipment to meet the needs of high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FI840G-VB MOSFET Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ @ VGS = 10V
- **Drain current (ID)**: 10A
- **Technology**: Plannar
- **Package type**: TO220F
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ @ VGS = 10V
- **Drain current (ID)**: 10A
- **Technology**: Plannar
Domain and module applications：
Application fields and module examples
FI840G-VB MOSFET is suitable for the following fields and modules due to its high withstand voltage, high current capability and stable performance:
1. **Power management**: In high voltage power modules, such as DC-DC converters and AC-DC power supplies, FI840G-VB MOSFET can be used as a switching component to help control the conversion and distribution of high voltage power, improving the efficiency and stability of the system.
2. **Inverter**: In photovoltaic inverters and industrial inverters, FI840G-VB MOSFET is used to convert DC power to AC power. It can handle high voltage and high current, providing reliable support for solar power generation and other high power applications.
3. **Motor drive**: In high voltage motor control systems, FI840G-VB MOSFET can be used to control the start, stop and speed regulation of the motor, which is particularly suitable for motor applications that require high current and high voltage, such as power tools and industrial motors.
4. **Switching Power Supply**: Due to its high voltage resistance and high current handling capabilities, FI840G-VB is suitable for use in switching power supplies (SMPS) for efficient conversion and regulation of electrical energy, ensuring system stability and performance under high load conditions.
Through these application examples, FI840G-VB MOSFET demonstrates its strong performance and wide applicability in high voltage and high power fields such as power management, inverters, motor drives and switching power supplies.
FI840G-VB MOSFET is suitable for the following fields and modules due to its high withstand voltage, high current capability and stable performance:
1. **Power management**: In high voltage power modules, such as DC-DC converters and AC-DC power supplies, FI840G-VB MOSFET can be used as a switching component to help control the conversion and distribution of high voltage power, improving the efficiency and stability of the system.
2. **Inverter**: In photovoltaic inverters and industrial inverters, FI840G-VB MOSFET is used to convert DC power to AC power. It can handle high voltage and high current, providing reliable support for solar power generation and other high power applications.
3. **Motor drive**: In high voltage motor control systems, FI840G-VB MOSFET can be used to control the start, stop and speed regulation of the motor, which is particularly suitable for motor applications that require high current and high voltage, such as power tools and industrial motors.
4. **Switching Power Supply**: Due to its high voltage resistance and high current handling capabilities, FI840G-VB is suitable for use in switching power supplies (SMPS) for efficient conversion and regulation of electrical energy, ensuring system stability and performance under high load conditions.
Through these application examples, FI840G-VB MOSFET demonstrates its strong performance and wide applicability in high voltage and high power fields such as power management, inverters, motor drives and switching power supplies.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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