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FI830G-VB Product details
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FI830G-VB MOSFET Product Introduction
FI830G-VB is a single N-channel MOSFET in TO220F package, designed for high voltage applications. It has a drain-source voltage of up to 650V and can handle very high voltage loads. With a maximum drain current of 4A and an on-resistance (RDS(ON)) of 2560mΩ (at VGS = 10V), the MOSFET uses planar technology and is suitable for applications that require high voltage resistance and stable performance.
FI830G-VB is a single N-channel MOSFET in TO220F package, designed for high voltage applications. It has a drain-source voltage of up to 650V and can handle very high voltage loads. With a maximum drain current of 4A and an on-resistance (RDS(ON)) of 2560mΩ (at VGS = 10V), the MOSFET uses planar technology and is suitable for applications that require high voltage resistance and stable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FI830G-VB Detailed parameter description
- **Package: ** TO220F
- **Configuration: ** Single-N-Channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Throw-on voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 2560mΩ @ VGS = 10V
- **Drain current (ID): ** 4A
- **Technology: ** Planar technology
- **Package: ** TO220F
- **Configuration: ** Single-N-Channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Throw-on voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 2560mΩ @ VGS = 10V
- **Drain current (ID): ** 4A
- **Technology: ** Planar technology
Domain and module applications：
FI830G-VB Applicable Fields and Modules
The high voltage tolerance and relatively low current handling capability of the FI830G-VB MOSFET make it particularly suitable for the following fields and modules:
1. **High Voltage Power Management**: The FI830G-VB is suitable for high voltage power management modules, such as high voltage DC-DC converters. These applications require MOSFETs to handle high voltages while ensuring stable switching performance.
2. **High Voltage Inverter**: In high voltage inverter systems, such as solar inverters or industrial inverters, the high voltage tolerance of the FI830G-VB enables it to withstand the operation of the inverter at high voltages.
3. **Power Protection Circuit**: This MOSFET can be used in high voltage power protection circuits to prevent overvoltage or current overload conditions and effectively protect the power system.
4. **High-voltage switching applications**: In applications that require high-voltage switching, such as high-voltage load switching or power conversion equipment, the FI830G-VB provides high voltage handling capabilities and stable switching performance.
Through these application examples, the FI830G-VB demonstrates its reliability and stability in high-voltage environments, providing an effective solution for a variety of high-voltage power and switching applications.
The high voltage tolerance and relatively low current handling capability of the FI830G-VB MOSFET make it particularly suitable for the following fields and modules:
1. **High Voltage Power Management**: The FI830G-VB is suitable for high voltage power management modules, such as high voltage DC-DC converters. These applications require MOSFETs to handle high voltages while ensuring stable switching performance.
2. **High Voltage Inverter**: In high voltage inverter systems, such as solar inverters or industrial inverters, the high voltage tolerance of the FI830G-VB enables it to withstand the operation of the inverter at high voltages.
3. **Power Protection Circuit**: This MOSFET can be used in high voltage power protection circuits to prevent overvoltage or current overload conditions and effectively protect the power system.
4. **High-voltage switching applications**: In applications that require high-voltage switching, such as high-voltage load switching or power conversion equipment, the FI830G-VB provides high voltage handling capabilities and stable switching performance.
Through these application examples, the FI830G-VB demonstrates its reliability and stability in high-voltage environments, providing an effective solution for a variety of high-voltage power and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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