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FI820G-VB Product details

Product introduction:

1. FI820G-VB MOSFET Product Introduction

FI820G-VB is a single N-channel MOSFET in TO220F package, designed for high voltage applications. With a drain-source voltage (VDS) specification of up to 650V, this MOSFET can handle higher voltage levels and is suitable for switching applications in high voltage circuits. Its gate-source voltage (VGS) tolerance range is ±30V, providing a large safety margin. The turn-on voltage (Vth) of FI820G-VB is 3.5V, and under VGS=10V conditions, the on-resistance (RDS(ON)) is 2560mΩ, which can support a drain current (ID) of up to 4A. This MOSFET adopts Plannar technology to provide stable high-voltage switching performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 4A 2560mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 4A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 4A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. FI820G-VB Detailed parameter description

- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS = 10V
- **Drain current (ID)**: 4A
- **Technology**: Plannar technology
- **Power consumption (Ptot)**: 50W (typical)
- **Operating temperature range**: -55°C to 175°C
- **Maximum junction temperature (Tj)**: 175°C

Domain and module applications:

3. Application fields and module examples

1. **High-voltage power switch**: FI820G-VB is suitable for high-voltage power switch modules and can operate stably at voltages up to 650V. This makes it very suitable for switching and protecting high-voltage power supplies, ensuring the stability and safety of power systems.

2. **High-voltage inverter**: In high-voltage inverter applications, FI820G-VB can be used as a power switch component, especially in solar photovoltaic systems and other equipment that requires high-voltage inversion. It can effectively manage and convert high-voltage currents to ensure efficient operation of the system.

3. **Industrial power control**: The high-voltage handling capability of this MOSFET makes it suitable for industrial power control systems. In situations where high-voltage loads need to be precisely controlled, such as industrial equipment and large motor drive systems, FI820G-VB can provide reliable switching performance.

4. **Power Electronic Converters**: In power electronic converters, FI820G-VB is a switching element capable of processing high voltage signals and is used in various power conversion and regulation systems, such as transformers and power conditioning equipment.

FI820G-VB's high voltage handling capability and stable switching performance make it excellent in applications such as high voltage power management, inverters, and industrial control, especially in areas that require high voltage tolerance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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