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FI734G-VB Product details
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FI734G-VB MOSFET Product Introduction
FI734G-VB is a unipolar N-channel MOSFET in TO220F package, designed for applications requiring high voltage and medium current. The drain-source voltage (VDS) of this MOSFET is as high as 650V, suitable for high voltage circuits. The gate-source voltage (VGS) range is ±30V, providing sufficient gate drive voltage. Its threshold voltage (Vth) is 3.5V, ensuring effective turn-on at moderate gate voltage. The on-resistance (RDS(ON)) is 1100mΩ at VGS=10V, which is relatively high and suitable for medium current loads in high voltage environments. The maximum drain current (ID) is 7A. FI734G-VB uses planar technology to provide reliable switching performance and stability.
FI734G-VB is a unipolar N-channel MOSFET in TO220F package, designed for applications requiring high voltage and medium current. The drain-source voltage (VDS) of this MOSFET is as high as 650V, suitable for high voltage circuits. The gate-source voltage (VGS) range is ±30V, providing sufficient gate drive voltage. Its threshold voltage (Vth) is 3.5V, ensuring effective turn-on at moderate gate voltage. The on-resistance (RDS(ON)) is 1100mΩ at VGS=10V, which is relatively high and suitable for medium current loads in high voltage environments. The maximum drain current (ID) is 7A. FI734G-VB uses planar technology to provide reliable switching performance and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package type**: TO220F
- The TO220F package has good thermal management performance and is suitable for effective heat dissipation in high power applications.
2. **Configuration**: Unipolar N-channel
- This is a unipolar N-channel type MOSFET suitable for switching applications that require unidirectional current flow.
3. **Drain-Source Voltage (VDS)**: 650V
- This MOSFET can withstand a maximum drain-source voltage of 650V, suitable for high voltage circuit applications.
4. **Gate-Source Voltage (VGS)**: ±30V
- The maximum allowed gate-source voltage is ±30V, providing ample gate drive voltage range.
5. **Threshold Voltage (Vth)**: 3.5V
- The threshold voltage is 3.5V, which indicates the minimum gate voltage required to turn on the MOSFET.
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- At a gate voltage of 10V, the on-resistance is 1100mΩ, which is high but suitable for loads in high voltage environments.
7. **Drain Current (ID)**: 7A
- The maximum drain current is 7A, suitable for medium current applications.
8. **Technology**: Planar Technology
- Using planar technology, it provides reliable switching performance and stability, suitable for high voltage and medium current applications.
1. **Package type**: TO220F
- The TO220F package has good thermal management performance and is suitable for effective heat dissipation in high power applications.
2. **Configuration**: Unipolar N-channel
- This is a unipolar N-channel type MOSFET suitable for switching applications that require unidirectional current flow.
3. **Drain-Source Voltage (VDS)**: 650V
- This MOSFET can withstand a maximum drain-source voltage of 650V, suitable for high voltage circuit applications.
4. **Gate-Source Voltage (VGS)**: ±30V
- The maximum allowed gate-source voltage is ±30V, providing ample gate drive voltage range.
5. **Threshold Voltage (Vth)**: 3.5V
- The threshold voltage is 3.5V, which indicates the minimum gate voltage required to turn on the MOSFET.
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- At a gate voltage of 10V, the on-resistance is 1100mΩ, which is high but suitable for loads in high voltage environments.
7. **Drain Current (ID)**: 7A
- The maximum drain current is 7A, suitable for medium current applications.
8. **Technology**: Planar Technology
- Using planar technology, it provides reliable switching performance and stability, suitable for high voltage and medium current applications.
Domain and module applications：
Application Examples
The high voltage and medium current characteristics of FI734G-VB MOSFET make it suitable for multiple fields and modules:
1. **High Voltage Power System**:
- This MOSFET is suitable for high voltage power management systems, such as high voltage DC-DC converters and switching power supplies. Its high voltage tolerance enables it to handle high voltage input and output, ensuring the stability and safety of the system.
2. **Power Converter**:
- In power conversion applications, such as high voltage inverters and power converters, FI734G-VB can effectively handle switching operations in high voltage environments, ensuring the efficiency and stability of the conversion process.
3. **Motor Drive Circuit**:
- Suitable for high voltage motor control circuits in motor drive applications, FI734G-VB can handle current requirements under high voltage and provide stable and reliable driving performance.
4. **High Voltage Switchgear**:
- This MOSFET can also be used in high voltage switchgear, such as high voltage protection circuits and switchgear. Its high voltage withstand capability ensures reliable operation in high voltage environments.
These application examples demonstrate the wide applicability of FI734G-VB in the high voltage field, making it a reliable choice when designing high voltage circuits and systems.
The high voltage and medium current characteristics of FI734G-VB MOSFET make it suitable for multiple fields and modules:
1. **High Voltage Power System**:
- This MOSFET is suitable for high voltage power management systems, such as high voltage DC-DC converters and switching power supplies. Its high voltage tolerance enables it to handle high voltage input and output, ensuring the stability and safety of the system.
2. **Power Converter**:
- In power conversion applications, such as high voltage inverters and power converters, FI734G-VB can effectively handle switching operations in high voltage environments, ensuring the efficiency and stability of the conversion process.
3. **Motor Drive Circuit**:
- Suitable for high voltage motor control circuits in motor drive applications, FI734G-VB can handle current requirements under high voltage and provide stable and reliable driving performance.
4. **High Voltage Switchgear**:
- This MOSFET can also be used in high voltage switchgear, such as high voltage protection circuits and switchgear. Its high voltage withstand capability ensures reliable operation in high voltage environments.
These application examples demonstrate the wide applicability of FI734G-VB in the high voltage field, making it a reliable choice when designing high voltage circuits and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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