FI620G-VB Product details
Product introduction:
FI620G-VB is a high voltage N-channel MOSFET in TO220F package. The MOSFET can withstand drain-source voltage (VDS) up to 200V and gate-source voltage (VGS) range of ±20V. Its threshold voltage (Vth) is 3V, providing stable switching performance. The on-state resistance (RDS(ON)) of the MOSFET is 265mΩ at a gate-source voltage of 10V and can handle a maximum current of 10A. FI620G-VB adopts Trench technology, which has lower power loss and higher efficiency, and is suitable for high voltage and high power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | 265mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
1. **Package type:** TO220F
- **Configuration:** Single N-channel
- **Technology:** Trench
2. **Electrical characteristics:**
- **Drain-source voltage (VDS):** 200V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V (minimum gate voltage required to start conduction)
- **On-state resistance (RDS(ON)):** 265mΩ @ VGS = 10V
- **Drain current (ID):** 10A (maximum continuous current)
3. **Performance characteristics:**
- **Switching speed:** Designed to optimize for medium switching frequency applications
- **Thermal resistance:** Suitable for handling heat in high power applications
Domain and module applications:
FI620G-VB MOSFET is suitable for various high voltage and high power applications due to its high voltage handling capability and high efficiency performance. The following are application examples of this MOSFET in some fields and modules:
1. **High Voltage Power Supply:** FI620G-VB can be used in high voltage power supply systems, such as high voltage switching power supplies or power converters. Its drain-source voltage capability of up to 200V enables it to handle power switches in high voltage applications, ensuring the stability and reliability of the power supply system.
2. **Industrial Motor Drive:** In industrial motor drive systems, FI620G-VB can be used to control the switching of high voltage motors, especially in motor control applications that require high current and high voltage. Its low on-state resistance helps improve the efficiency and performance of motor drive systems.
3. **Battery Management System (BMS):** Due to its high voltage and high current handling capabilities, FI620G-VB is suitable for management systems of large battery packs, which can effectively control high voltage and high current during charging and discharging, ensuring the safety and efficiency of the battery system.
4. **Power Inverter:** In power inverter applications, such as solar inverters or UPS systems, FI620G-VB can be used to handle high voltage current conversion in the inverter. Its high voltage tolerance and low power consumption characteristics help improve the efficiency and stability of the inverter.
5. **Automotive Electronics:** FI620G-VB can also be integrated into automotive electronic systems, such as power management systems or high-voltage battery systems in electric vehicles, to handle high voltage power switching and provide reliable power management solutions.
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