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FI614G-VB Product details
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FI614G-VB MOSFET Product Introduction
FI614G-VB is a single N-channel MOSFET in TO220F package with a drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V, capable of handling higher voltage and current loads. The device has a threshold voltage (Vth) of 3V, providing good switching control characteristics. FI614G-VB uses trench technology (Trench Technology), with an on-resistance (RDS(ON)) of 1100mΩ at VGS=10V and a maximum drain current (ID) of 4.4A. This MOSFET is suitable for applications requiring high voltage and high power, especially in high-voltage switching and power conversion circuits.
FI614G-VB is a single N-channel MOSFET in TO220F package with a drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V, capable of handling higher voltage and current loads. The device has a threshold voltage (Vth) of 3V, providing good switching control characteristics. FI614G-VB uses trench technology (Trench Technology), with an on-resistance (RDS(ON)) of 1100mΩ at VGS=10V and a maximum drain current (ID) of 4.4A. This MOSFET is suitable for applications requiring high voltage and high power, especially in high-voltage switching and power conversion circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3V | 4.4A | 1100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3V | 4.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3V | 4.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.4A
- **Technology**: Trench Technology
- **Operating temperature range**: -55°C to 150°C
- **Maximum power dissipation (Ptot)**: 65W (at 25°C)
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.4A
- **Technology**: Trench Technology
- **Operating temperature range**: -55°C to 150°C
- **Maximum power dissipation (Ptot)**: 65W (at 25°C)
Domain and module applications：
Applications and Modules
The FI614G-VB MOSFET has a high drain-source voltage and relatively low on-resistance, making it very suitable for the following applications:
1. **High Voltage Power Supplies**: Due to its 250V drain-source voltage, the FI614G-VB can be used for switch control in high voltage power supplies to ensure stable operation and effective power conversion.
2. **Motor Drive Circuits**: In motor drive applications, the FI614G-VB can be used to control the high voltage and current of the motor, especially in industrial motors and high-power drives.
3. **Power Converters**: This MOSFET is suitable for use in high voltage DC-DC converters, which can effectively manage the flow of high power current and improve the energy efficiency of the system.
4. **Power Protection Circuits**: FI614G-VB can be used in power protection circuits to help protect equipment from high voltage overloads and increase system reliability and safety.
5. **Lighting Systems**: In lighting applications that require high voltage and high power, such as high-pressure sodium lamp drivers, FI614G-VB can be used to provide stable current control.
These applications demonstrate the wide applicability of FI614G-VB in high voltage and high power applications, and can meet the power and switch needs of different fields.
The FI614G-VB MOSFET has a high drain-source voltage and relatively low on-resistance, making it very suitable for the following applications:
1. **High Voltage Power Supplies**: Due to its 250V drain-source voltage, the FI614G-VB can be used for switch control in high voltage power supplies to ensure stable operation and effective power conversion.
2. **Motor Drive Circuits**: In motor drive applications, the FI614G-VB can be used to control the high voltage and current of the motor, especially in industrial motors and high-power drives.
3. **Power Converters**: This MOSFET is suitable for use in high voltage DC-DC converters, which can effectively manage the flow of high power current and improve the energy efficiency of the system.
4. **Power Protection Circuits**: FI614G-VB can be used in power protection circuits to help protect equipment from high voltage overloads and increase system reliability and safety.
5. **Lighting Systems**: In lighting applications that require high voltage and high power, such as high-pressure sodium lamp drivers, FI614G-VB can be used to provide stable current control.
These applications demonstrate the wide applicability of FI614G-VB in high voltage and high power applications, and can meet the power and switch needs of different fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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