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FI610G-VB Product details
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FI610G-VB MOSFET Product Introduction
FI610G-VB is a unipolar N-channel MOSFET in TO220F package, designed for applications requiring high voltage and medium current. With a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for high voltage circuits. Its threshold voltage (Vth) is 3V, enabling it to operate normally at moderate gate voltages. The on-resistance (RDS(ON)) is 265mΩ at VGS=10V, which is relatively high, but still provides reliable performance in high voltage applications. The maximum drain current (ID) is 10A, suitable for medium current loads. FI610G-VB uses advanced trench technology to ensure good switching performance and stability.
FI610G-VB is a unipolar N-channel MOSFET in TO220F package, designed for applications requiring high voltage and medium current. With a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for high voltage circuits. Its threshold voltage (Vth) is 3V, enabling it to operate normally at moderate gate voltages. The on-resistance (RDS(ON)) is 265mΩ at VGS=10V, which is relatively high, but still provides reliable performance in high voltage applications. The maximum drain current (ID) is 10A, suitable for medium current loads. FI610G-VB uses advanced trench technology to ensure good switching performance and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | 265mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package type**: TO220F
- The TO220F package provides good thermal management and is suitable for high power applications that require effective heat dissipation.
2. **Configuration**: Unipolar N-channel
- This is a unipolar N-channel type MOSFET suitable for switching applications that require unidirectional current flow.
3. **Drain-Source Voltage (VDS)**: 200V
- This MOSFET can withstand a maximum drain-source voltage of 200V and is suitable for high voltage circuits.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum allowed gate-source voltage is ±20V, providing sufficient gate drive voltage range.
5. **Threshold Voltage (Vth)**: 3V
- The threshold voltage is 3V, which represents the minimum gate voltage required to turn on the MOSFET.
6. **On-resistance (RDS(ON))**: 265mΩ @ VGS=10V
- At a gate voltage of 10V, the on-resistance is 265mΩ, which is relatively high, but suitable for medium current loads in high voltage applications.
7. **Drain current (ID)**: 10A
- The maximum drain current is 10A, suitable for medium current applications.
8. **Technology**: Trench technology
- Using trench technology, it has lower gate charge and stable switching performance, suitable for switching operation in high voltage applications.
1. **Package type**: TO220F
- The TO220F package provides good thermal management and is suitable for high power applications that require effective heat dissipation.
2. **Configuration**: Unipolar N-channel
- This is a unipolar N-channel type MOSFET suitable for switching applications that require unidirectional current flow.
3. **Drain-Source Voltage (VDS)**: 200V
- This MOSFET can withstand a maximum drain-source voltage of 200V and is suitable for high voltage circuits.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum allowed gate-source voltage is ±20V, providing sufficient gate drive voltage range.
5. **Threshold Voltage (Vth)**: 3V
- The threshold voltage is 3V, which represents the minimum gate voltage required to turn on the MOSFET.
6. **On-resistance (RDS(ON))**: 265mΩ @ VGS=10V
- At a gate voltage of 10V, the on-resistance is 265mΩ, which is relatively high, but suitable for medium current loads in high voltage applications.
7. **Drain current (ID)**: 10A
- The maximum drain current is 10A, suitable for medium current applications.
8. **Technology**: Trench technology
- Using trench technology, it has lower gate charge and stable switching performance, suitable for switching operation in high voltage applications.
Domain and module applications：
Application Examples
FI610G-VB MOSFET is suitable for the following fields and modules due to its high voltage and medium current characteristics:
1. **Power Management System**:
- This MOSFET is suitable for high voltage power management systems, such as high voltage DC-DC converters and switching power supplies. Its high voltage tolerance enables it to handle high voltage input and output, ensuring stable system operation.
2. **Power Converter**:
- In power conversion applications, such as high voltage inverters and power converters, FI610G-VB is able to handle switching operations under high voltage environments, ensuring conversion efficiency and system reliability.
3. **Motor Drive Circuit**:
- In motor drive applications, especially in motor control circuits that require high voltage drive, FI610G-VB can handle current under high voltage and provide stable drive performance.
4. **High Voltage Switch**:
- This MOSFET is suitable for applications that require high voltage switching operations, such as high voltage protection circuits and switchgear. Its high withstand voltage performance ensures reliable operation in high voltage environments.
These applications of FI610G-VB demonstrate its wide applicability in the high voltage field, making it a reliable choice when designing high voltage circuits and systems.
FI610G-VB MOSFET is suitable for the following fields and modules due to its high voltage and medium current characteristics:
1. **Power Management System**:
- This MOSFET is suitable for high voltage power management systems, such as high voltage DC-DC converters and switching power supplies. Its high voltage tolerance enables it to handle high voltage input and output, ensuring stable system operation.
2. **Power Converter**:
- In power conversion applications, such as high voltage inverters and power converters, FI610G-VB is able to handle switching operations under high voltage environments, ensuring conversion efficiency and system reliability.
3. **Motor Drive Circuit**:
- In motor drive applications, especially in motor control circuits that require high voltage drive, FI610G-VB can handle current under high voltage and provide stable drive performance.
4. **High Voltage Switch**:
- This MOSFET is suitable for applications that require high voltage switching operations, such as high voltage protection circuits and switchgear. Its high withstand voltage performance ensures reliable operation in high voltage environments.
These applications of FI610G-VB demonstrate its wide applicability in the high voltage field, making it a reliable choice when designing high voltage circuits and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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