中文
English
FI540N-VB Product details
Back to previous pageProduct introduction：
FI540N-VB MOSFET Product Introduction
FI540N-VB is a unipolar N-channel MOSFET packaged in a TO220F housing. This MOSFET uses Trench technology and has excellent switching performance and high current carrying capacity. Its maximum drain-to-source voltage (VDS) is 100V, the gate-to-source voltage (VGS) tolerance is ±20V, and the threshold voltage (Vth) is 1.8V. When VGS is 10V, the on-resistance (RDS(ON)) of FI540N-VB is 34mΩ, and it can carry a continuous drain current of up to 50A, suitable for various high-power electronic applications.
FI540N-VB is a unipolar N-channel MOSFET packaged in a TO220F housing. This MOSFET uses Trench technology and has excellent switching performance and high current carrying capacity. Its maximum drain-to-source voltage (VDS) is 100V, the gate-to-source voltage (VGS) tolerance is ±20V, and the threshold voltage (Vth) is 1.8V. When VGS is 10V, the on-resistance (RDS(ON)) of FI540N-VB is 34mΩ, and it can carry a continuous drain current of up to 50A, suitable for various high-power electronic applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | 34mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **Drain to source voltage (VDS)**: 100V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 50A
- **Technology**: Trench
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **Drain to source voltage (VDS)**: 100V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Application examples
FI540N-VB MOSFET is suitable for a wide range of applications, especially in high current and high power scenarios. It is ideal for **power management systems**, such as power supply units (PSUs) and high-power switching power supplies, where high current and low on-resistance are required to improve efficiency. In **motor drive circuits**, FI540N-VB can be used as a switch to drive the motor, suitable for various industrial and automotive applications, ensuring the stability and reliability of motor operation. In addition, this MOSFET is also very suitable for **battery management systems (BMS)**, which are used in electric vehicles and energy storage systems to manage the charging and discharging process. It can also be used in **DC-DC converters** to achieve efficient voltage regulation and power conversion to meet the needs of consumer electronics and industrial equipment.
FI540N-VB MOSFET is suitable for a wide range of applications, especially in high current and high power scenarios. It is ideal for **power management systems**, such as power supply units (PSUs) and high-power switching power supplies, where high current and low on-resistance are required to improve efficiency. In **motor drive circuits**, FI540N-VB can be used as a switch to drive the motor, suitable for various industrial and automotive applications, ensuring the stability and reliability of motor operation. In addition, this MOSFET is also very suitable for **battery management systems (BMS)**, which are used in electric vehicles and energy storage systems to manage the charging and discharging process. It can also be used in **DC-DC converters** to achieve efficient voltage regulation and power conversion to meet the needs of consumer electronics and industrial equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
