FI530N-VB Product details
Product introduction:
The FI530N-VB is a single N-channel MOSFET in a TO220F package, designed for high voltage and high current applications. The MOSFET has a drain-source voltage (VDS) of 100V, suitable for applications that handle higher voltages, and a gate-source voltage (VGS) of ±20V, supporting a wide range of gate drives. Its threshold voltage (Vth) is 1.8V, ensuring reliable switching performance at low gate voltages. The on-resistance (RDS(ON)) of the FI530N-VB is 86mΩ@VGS=10V, providing good conduction performance with a maximum drain current (ID) of 18A. Manufactured using Trench technology, the device has efficient switching performance and low power losses, making it ideal for applications that require high reliability and high performance.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 86mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology type**: Trench
- **Gate charge (Qg)**: Low, suitable for high frequency applications
- **Thermal resistance**: Low, suitable for high power applications
- **Operating temperature range**: -55°C to +150°C
Domain and module applications:
With its high voltage and high current handling capabilities, the FI530N-VB MOSFET is suitable for the following applications:
1. **Switching Mode Power Supply (SMPS)**: In switching mode power supplies, the high voltage handling capability and low on-resistance of the FI530N-VB make it an ideal choice. It can effectively handle high voltage and high current switching tasks, improving power efficiency and stability.
2. **Motor Drive**: This MOSFET also performs well in motor drive circuits. Its high current carrying capability and low on-resistance ensure efficient operation of the motor drive system, reduce power loss and improve system performance.
3. **Automotive Electronics**: In automotive electronic systems, such as electric steering systems and motor control, the FI530N-VB provides reliable current control and high voltage protection, ensuring the stability and safety of automotive electronic systems under various working conditions.
4. **Industrial Control**: FI530N-VB is suitable for industrial automation control systems, such as relay drivers and switch control modules. Its efficient switching performance and high power handling capability enable it to meet the requirements of industrial control systems for high performance and high reliability.
In general, FI530N-VB MOSFET provides efficient power control solutions in multiple fields such as switching power supplies, motor drives, automotive electronics and industrial control with its superior electrical performance and reliability.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image