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FI520G-VB TO220F Product details
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FI520G-VB MOSFET Product Introduction
FI520G-VB is a unipolar N-channel MOSFET in a TO220F package, designed for applications requiring efficient power management and switching capabilities. Its drain-source voltage (VDS) is 100V and gate-source voltage (VGS) is ±20V, which optimizes high-efficiency power conversion and load switching. The threshold voltage (Vth) of this MOSFET is 1.8V, enabling it to operate effectively at low gate drive voltages. Its on-resistance (RDS(ON)) is 86mΩ at VGS=10V, providing low conduction losses and suitable for applications with high efficiency requirements. The maximum drain current (ID) is 18A, suitable for a variety of medium and high power applications. This MOSFET uses advanced trench technology to ensure low gate charge and fast switching performance.
FI520G-VB is a unipolar N-channel MOSFET in a TO220F package, designed for applications requiring efficient power management and switching capabilities. Its drain-source voltage (VDS) is 100V and gate-source voltage (VGS) is ±20V, which optimizes high-efficiency power conversion and load switching. The threshold voltage (Vth) of this MOSFET is 1.8V, enabling it to operate effectively at low gate drive voltages. Its on-resistance (RDS(ON)) is 86mΩ at VGS=10V, providing low conduction losses and suitable for applications with high efficiency requirements. The maximum drain current (ID) is 18A, suitable for a variety of medium and high power applications. This MOSFET uses advanced trench technology to ensure low gate charge and fast switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package type**: TO220F
- The TO220F package provides excellent thermal performance, with a full plastic package that provides excellent insulation and heat dissipation.
2. **Configuration**: Unipolar N-channel
- This is a unipolar N-channel type MOSFET suitable for switching applications that require unidirectional current flow.
3. **Drain-Source Voltage (VDS)**: 100V
- The maximum drain-source voltage of this MOSFET is 100V, suitable for medium voltage applications.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum allowable gate-source voltage is ±20V, which provides sufficient margin for gate drive control in the circuit.
5. **Threshold Voltage (Vth)**: 1.8V
- The gate threshold voltage is 1.8V, which indicates the minimum gate voltage required to turn on the MOSFET.
6. **On-resistance (RDS(ON))**: 86mΩ @ VGS=10V
- At a gate voltage of 10V, the on-resistance is 86mΩ, ensuring low conduction losses and improving overall circuit efficiency.
7. **Drain Current (ID)**: 18A
- The maximum drain current is 18A, supporting medium and high current loads, suitable for a variety of power applications.
8. **Technology**: Trench Technology
- This MOSFET adopts trench technology, which has low gate charge and fast switching speed, improving overall performance in high-frequency applications.
1. **Package type**: TO220F
- The TO220F package provides excellent thermal performance, with a full plastic package that provides excellent insulation and heat dissipation.
2. **Configuration**: Unipolar N-channel
- This is a unipolar N-channel type MOSFET suitable for switching applications that require unidirectional current flow.
3. **Drain-Source Voltage (VDS)**: 100V
- The maximum drain-source voltage of this MOSFET is 100V, suitable for medium voltage applications.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum allowable gate-source voltage is ±20V, which provides sufficient margin for gate drive control in the circuit.
5. **Threshold Voltage (Vth)**: 1.8V
- The gate threshold voltage is 1.8V, which indicates the minimum gate voltage required to turn on the MOSFET.
6. **On-resistance (RDS(ON))**: 86mΩ @ VGS=10V
- At a gate voltage of 10V, the on-resistance is 86mΩ, ensuring low conduction losses and improving overall circuit efficiency.
7. **Drain Current (ID)**: 18A
- The maximum drain current is 18A, supporting medium and high current loads, suitable for a variety of power applications.
8. **Technology**: Trench Technology
- This MOSFET adopts trench technology, which has low gate charge and fast switching speed, improving overall performance in high-frequency applications.
Domain and module applications：
Application Examples
FI520G-VB MOSFET is particularly suitable for the following applications and modules due to its robust design and performance characteristics:
1. **Power Module**:
- This MOSFET is suitable for DC-DC converters and switch mode power supplies (SMPS), where efficient switching and low power losses are critical. Its low RDS(ON) ensures minimal energy consumption and improves power efficiency.
2. **Motor Drive**:
- In motor control applications such as industrial automation and robotics, the FI520G-VB can handle the high currents and voltages required, providing reliable performance while generating minimal heat.
3. **Battery Management System**:
- This MOSFET is suitable for battery protection and management circuits in electric vehicles and portable electronic devices. Its ability to handle high currents and low on-resistance helps reduce energy losses, thereby extending battery life.
4. **Inverter and Solar Power Systems**:
- FI520G-VB can be used in inverter circuits and solar power systems, where efficient energy conversion is critical. The fast switching capability of MOSFETs ensures that power is converted with minimal losses, improving the overall efficiency of renewable energy systems.
These application examples demonstrate the applicability of FI520G-VB in different fields, making it a valuable component for engineers and designers when developing advanced electronic systems.
FI520G-VB MOSFET is particularly suitable for the following applications and modules due to its robust design and performance characteristics:
1. **Power Module**:
- This MOSFET is suitable for DC-DC converters and switch mode power supplies (SMPS), where efficient switching and low power losses are critical. Its low RDS(ON) ensures minimal energy consumption and improves power efficiency.
2. **Motor Drive**:
- In motor control applications such as industrial automation and robotics, the FI520G-VB can handle the high currents and voltages required, providing reliable performance while generating minimal heat.
3. **Battery Management System**:
- This MOSFET is suitable for battery protection and management circuits in electric vehicles and portable electronic devices. Its ability to handle high currents and low on-resistance helps reduce energy losses, thereby extending battery life.
4. **Inverter and Solar Power Systems**:
- FI520G-VB can be used in inverter circuits and solar power systems, where efficient energy conversion is critical. The fast switching capability of MOSFETs ensures that power is converted with minimal losses, improving the overall efficiency of renewable energy systems.
These application examples demonstrate the applicability of FI520G-VB in different fields, making it a valuable component for engineers and designers when developing advanced electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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