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FI510G-VB Product details
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FI510G-VB MOSFET Product Introduction
The FI510G-VB is a single-channel N-type MOSFET in a TO220F package designed for applications requiring efficient power management and switching performance. With a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, the device provides reliable current control and power management in a variety of industrial and consumer electronic devices.
The FI510G-VB is a single-channel N-type MOSFET in a TO220F package designed for applications requiring efficient power management and switching performance. With a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, the device provides reliable current control and power management in a variety of industrial and consumer electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FI510G-VB MOSFET Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 86mΩ @ VGS = 10V
- **Drain current (ID)**: 18A
- **Technology**: Trench (trench technology)
- **Package type**: TO220F
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 86mΩ @ VGS = 10V
- **Drain current (ID)**: 18A
- **Technology**: Trench (trench technology)
Domain and module applications：
Application fields and module examples
FI510G-VB MOSFET is widely used in the following fields and modules due to its high withstand voltage and low on-resistance characteristics:
1. **Power management module**: This MOSFET can be used as a power switch and synchronous rectifier, suitable for DC-DC converters and AC-DC power supplies to improve system efficiency and reduce power consumption.
2. **Motor drive**: In motor control systems, FI510G-VB can be used to control the start, stop and speed regulation of the motor, suitable for home appliances and industrial motor drive applications.
3. **Photovoltaic inverter**: In photovoltaic power generation systems, FI510G-VB MOSFET can be used as a switching element in the inverter to help convert DC to AC while improving the overall conversion efficiency of the system.
4. **Automotive electronics**: Due to its high reliability and robust current handling capabilities, this MOSFET is suitable for applications such as power distribution modules, electric power steering and lighting control in automobiles.
Through these application scenarios, FI510G-VB MOSFET demonstrates its strong capabilities in efficient power management, precise current control and durability, and is suitable for use in a variety of complex and harsh environments.
FI510G-VB MOSFET is widely used in the following fields and modules due to its high withstand voltage and low on-resistance characteristics:
1. **Power management module**: This MOSFET can be used as a power switch and synchronous rectifier, suitable for DC-DC converters and AC-DC power supplies to improve system efficiency and reduce power consumption.
2. **Motor drive**: In motor control systems, FI510G-VB can be used to control the start, stop and speed regulation of the motor, suitable for home appliances and industrial motor drive applications.
3. **Photovoltaic inverter**: In photovoltaic power generation systems, FI510G-VB MOSFET can be used as a switching element in the inverter to help convert DC to AC while improving the overall conversion efficiency of the system.
4. **Automotive electronics**: Due to its high reliability and robust current handling capabilities, this MOSFET is suitable for applications such as power distribution modules, electric power steering and lighting control in automobiles.
Through these application scenarios, FI510G-VB MOSFET demonstrates its strong capabilities in efficient power management, precise current control and durability, and is suitable for use in a variety of complex and harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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