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FI4410ZG-VB TO220F Product details
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1. FI4410ZG-VB TO220F Product Introduction
FI4410ZG-VB is a single-channel N-type power MOSFET in TO220F package. This MOSFET has excellent low on-resistance (RDS(ON)) and high current capability, and can provide efficient switching performance in high-power applications. Its maximum drain-source voltage (VDS) is 100V, the gate-source voltage (VGS) range is ±20V, and the turn-on threshold voltage (Vth) is 3V. Manufactured with advanced Trench technology, the device has extremely low on-resistance (3.7mΩ@VGS=10V) and can withstand up to 120A of continuous drain current, making it very suitable for applications requiring high efficiency and low power consumption.
FI4410ZG-VB is a single-channel N-type power MOSFET in TO220F package. This MOSFET has excellent low on-resistance (RDS(ON)) and high current capability, and can provide efficient switching performance in high-power applications. Its maximum drain-source voltage (VDS) is 100V, the gate-source voltage (VGS) range is ±20V, and the turn-on threshold voltage (Vth) is 3V. Manufactured with advanced Trench technology, the device has extremely low on-resistance (3.7mΩ@VGS=10V) and can withstand up to 120A of continuous drain current, making it very suitable for applications requiring high efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | 3.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FI4410ZG-VB TO220F Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Turning point voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 3.7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Turning point voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 3.7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
FI4410ZG-VB TO220F Applications and Modules
FI4410ZG-VB MOSFET is widely used in power electronics and electric vehicles due to its high current carrying capacity and low on-resistance. In power conversion modules, it can be used as a switching device for inverters to help improve power conversion efficiency. In electric vehicles, the device is suitable for motor drive controllers and battery management systems, which can withstand high load currents and reduce power losses. In addition, it is also suitable for solar inverters and uninterruptible power supply (UPS) systems because it can handle high power requirements and provide high efficiency.
FI4410ZG-VB MOSFET is widely used in power electronics and electric vehicles due to its high current carrying capacity and low on-resistance. In power conversion modules, it can be used as a switching device for inverters to help improve power conversion efficiency. In electric vehicles, the device is suitable for motor drive controllers and battery management systems, which can withstand high load currents and reduce power losses. In addition, it is also suitable for solar inverters and uninterruptible power supply (UPS) systems because it can handle high power requirements and provide high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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