FI4110G-VB TO220F Product details
Product introduction:
FI4110G-VB is a high-performance N-channel MOSFET in TO220F package. This MOSFET is designed for high voltage and high current applications with excellent electrical performance and reliability. Its maximum drain-source voltage (VDS) is 100V, the gate-source voltage (VGS) can reach ±20V, and the threshold voltage (Vth) is 3V. The on-resistance (RDS(ON)) of FI4110G-VB at 10V gate-source voltage is 3.7mΩ, which can maintain low power consumption under high current load. The maximum continuous drain current (ID) of this MOSFET is 120A, making it suitable for demanding high-power applications. Manufactured using trench technology, the FI4110G-VB not only provides low on-resistance, but also has excellent switching performance and high power handling capabilities, making it suitable for use in a variety of high-load circuits and equipment.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | 3.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10V @ 3.7mΩ
- **Maximum continuous drain current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications:
Due to its high current carrying capacity and low on-resistance, FI4110G-VB MOSFET is suitable for the following fields and modules:
1. **Power Management and Conversion**:
- In high-power power management systems, FI4110G-VB can be used as the main switching element. Its high current handling capability and low on-resistance can effectively improve power conversion efficiency and reduce power consumption, and is particularly suitable for use in high-efficiency power converters and DC-DC converters.
2. **Electric Vehicles**:
- In the battery management system and motor drive system of electric vehicles, FI4110G-VB can be used as a battery switch and motor control switch, providing reliable current handling and efficient power transmission to meet the needs of electric vehicles for high power and high efficiency.
3. **Industrial Equipment**:
- Used in various industrial power supplies and control systems, FI4110G-VB can support high-power loads such as industrial power converters, drive circuits and motor control, ensuring stable operation and high efficiency of equipment.
4. **Computers and Data Centers**:
- In computer power supplies and power modules of data centers, FI4110G-VB can be used as a high-power switch to handle high current loads, provide stable and efficient power conversion, and improve the performance and reliability of computer systems.
5. **High Power Switching Applications**:
- FI4110G-VB is suitable for high-power switching applications, such as high-power load switches and battery switches. Its low on-resistance and high current handling capability can meet the needs of various high-power switches.
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