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FI3306G-VB Product details
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FI3306G-VB MOSFET Product Introduction
The FI3306G-VB is a high-performance N-channel MOSFET in a TO220F package, designed for high current and low resistance applications. With a maximum drain-source voltage of 60V and a maximum continuous drain current of up to 210A, the FI3306G-VB is suitable for applications requiring high power density and low conduction losses. Using Trench technology, the MOSFET achieves extremely low on-resistance and provides excellent performance under high current conditions.
The FI3306G-VB is a high-performance N-channel MOSFET in a TO220F package, designed for high current and low resistance applications. With a maximum drain-source voltage of 60V and a maximum continuous drain current of up to 210A, the FI3306G-VB is suitable for applications requiring high power density and low conduction losses. Using Trench technology, the MOSFET achieves extremely low on-resistance and provides excellent performance under high current conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 210A | 2.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
- **Features**: TO220F package has good heat dissipation performance, suitable for high power and high current applications, can effectively manage heat and improve device reliability.
2. **Configuration**: Single channel N channel
- **Features**: Suitable for low-side switch applications, capable of providing reliable switching control in high current environments.
3. **Drain-source voltage (VDS)**: 60V
- **Features**: Suitable for applications handling medium voltages, capable of safely controlling voltages below 60V.
4. **Gate-source voltage (VGS)**: ±20V
- **Features**: The wide gate drive voltage range enables MOSFETs to adapt to a variety of drive circuits and enhances design flexibility.
5. **Threshold voltage (Vth)**: 3V
- **Features**: Moderate threshold voltage ensures that the MOSFET can be effectively turned on under common driving voltages, suitable for various control circuits.
6. **On-resistance (RDS(ON))**:
- **5mΩ at VGS = 4.5V**
- **2.6mΩ at VGS = 10V**
- **Features**: The extremely low on-resistance reduces the current loss through the MOSFET, improves system efficiency, and reduces heat generation.
7. **Maximum continuous drain current (ID)**: 210A
- **Features**: Up to 210A current handling capability, suitable for applications requiring high current density, such as high power supplies and motor drives.
8. **Technology**: Trench
- **Features**: Adopting Trench technology, it provides extremely low on-resistance and high switching speed, which is particularly suitable for efficient energy transmission and high-frequency switching applications.
1. **Package**: TO220F
- **Features**: TO220F package has good heat dissipation performance, suitable for high power and high current applications, can effectively manage heat and improve device reliability.
2. **Configuration**: Single channel N channel
- **Features**: Suitable for low-side switch applications, capable of providing reliable switching control in high current environments.
3. **Drain-source voltage (VDS)**: 60V
- **Features**: Suitable for applications handling medium voltages, capable of safely controlling voltages below 60V.
4. **Gate-source voltage (VGS)**: ±20V
- **Features**: The wide gate drive voltage range enables MOSFETs to adapt to a variety of drive circuits and enhances design flexibility.
5. **Threshold voltage (Vth)**: 3V
- **Features**: Moderate threshold voltage ensures that the MOSFET can be effectively turned on under common driving voltages, suitable for various control circuits.
6. **On-resistance (RDS(ON))**:
- **5mΩ at VGS = 4.5V**
- **2.6mΩ at VGS = 10V**
- **Features**: The extremely low on-resistance reduces the current loss through the MOSFET, improves system efficiency, and reduces heat generation.
7. **Maximum continuous drain current (ID)**: 210A
- **Features**: Up to 210A current handling capability, suitable for applications requiring high current density, such as high power supplies and motor drives.
8. **Technology**: Trench
- **Features**: Adopting Trench technology, it provides extremely low on-resistance and high switching speed, which is particularly suitable for efficient energy transmission and high-frequency switching applications.
Domain and module applications：
Application Examples
1. **High-efficiency power management system**
- **Application description**: FI3306G-VB can be used for switch control in high-efficiency power management systems, such as high-power power adapters or power modules. Its low on-resistance and high current handling capability can effectively improve the system's energy efficiency, reduce power loss and heat, and improve the overall performance of the device.
2. **Electric vehicle drive system**
- **Application description**: In the motor drive system of electric vehicles, FI3306G-VB can be used as a switching element in the motor control circuit. Its high current capability and low conduction loss enable it to reliably handle the needs of high-power motors while improving the operating efficiency and range of electric vehicles.
3. **DC-DC converter**
- **Application description**: FI3306G-VB is an ideal choice as a synchronous rectifier or main switch in a DC-DC converter. Its low on-resistance helps reduce converter power loss and improve conversion efficiency, making it suitable for high-power consumer electronics and computer power modules.
4. **Power Management IC**
- **Application Description**: In power management integrated circuits (ICs), FI3306G-VB can be used for high-current switching applications. Its high current handling capability and low on-resistance ensure the stability and efficiency of the power IC under high load conditions, making it suitable for complex power management systems.
5. **Industrial Equipment**
- **Application Description**: In industrial automation equipment, such as inverters and high-power controllers, FI3306G-VB can be used for load switching and power regulation. Its strong current handling capability and efficient switching performance can cope with the high power requirements in industrial environments.
FI3306G-VB is a high-current, high-efficiency MOSFET suitable for power management, electric vehicles, power converters, industrial equipment and other fields, providing stable, reliable high-power control and efficient energy transmission.
1. **High-efficiency power management system**
- **Application description**: FI3306G-VB can be used for switch control in high-efficiency power management systems, such as high-power power adapters or power modules. Its low on-resistance and high current handling capability can effectively improve the system's energy efficiency, reduce power loss and heat, and improve the overall performance of the device.
2. **Electric vehicle drive system**
- **Application description**: In the motor drive system of electric vehicles, FI3306G-VB can be used as a switching element in the motor control circuit. Its high current capability and low conduction loss enable it to reliably handle the needs of high-power motors while improving the operating efficiency and range of electric vehicles.
3. **DC-DC converter**
- **Application description**: FI3306G-VB is an ideal choice as a synchronous rectifier or main switch in a DC-DC converter. Its low on-resistance helps reduce converter power loss and improve conversion efficiency, making it suitable for high-power consumer electronics and computer power modules.
4. **Power Management IC**
- **Application Description**: In power management integrated circuits (ICs), FI3306G-VB can be used for high-current switching applications. Its high current handling capability and low on-resistance ensure the stability and efficiency of the power IC under high load conditions, making it suitable for complex power management systems.
5. **Industrial Equipment**
- **Application Description**: In industrial automation equipment, such as inverters and high-power controllers, FI3306G-VB can be used for load switching and power regulation. Its strong current handling capability and efficient switching performance can cope with the high power requirements in industrial environments.
FI3306G-VB is a high-current, high-efficiency MOSFET suitable for power management, electric vehicles, power converters, industrial equipment and other fields, providing stable, reliable high-power control and efficient energy transmission.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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