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FI1010G-VB Product details
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1. FI1010G-VB MOSFET Product Introduction
FI1010G-VB is a high-performance N-channel MOSFET in TO220F package. This MOSFET is designed to withstand higher drain-source voltage and current, and is suitable for demanding power management and high-power applications. The maximum drain-source voltage of FI1010G-VB is 60V, the gate-source voltage can reach ±20V, and the threshold voltage is 2.5V. Its on-resistance is 12mΩ at a gate-source voltage of 4.5V and 10mΩ at a gate-source voltage of 10V, which can effectively reduce conduction losses and improve system efficiency. The maximum continuous drain current (ID) is 70A, allowing this MOSFET to meet high power requirements. Manufactured using trench technology, it has excellent switching performance and low power consumption, making it suitable for a variety of high-load applications.
FI1010G-VB is a high-performance N-channel MOSFET in TO220F package. This MOSFET is designed to withstand higher drain-source voltage and current, and is suitable for demanding power management and high-power applications. The maximum drain-source voltage of FI1010G-VB is 60V, the gate-source voltage can reach ±20V, and the threshold voltage is 2.5V. Its on-resistance is 12mΩ at a gate-source voltage of 4.5V and 10mΩ at a gate-source voltage of 10V, which can effectively reduce conduction losses and improve system efficiency. The maximum continuous drain current (ID) is 70A, allowing this MOSFET to meet high power requirements. Manufactured using trench technology, it has excellent switching performance and low power consumption, making it suitable for a variety of high-load applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FI1010G-VB detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage**: 60V
- **Gate-source voltage**: ±20V
- **Threshold voltage**: 2.5V
- **On-resistance**:
- 4.5V @ 12mΩ
- 10V @ 10mΩ
- **Maximum continuous drain current**: 70A
- **Technology**: Trench technology
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage**: 60V
- **Gate-source voltage**: ±20V
- **Threshold voltage**: 2.5V
- **On-resistance**:
- 4.5V @ 12mΩ
- 10V @ 10mΩ
- **Maximum continuous drain current**: 70A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples of FI1010G-VB
Due to its high current carrying capacity, low on-resistance and high voltage withstand capability, FI1010G-VB MOSFET is suitable for the following fields and modules:
1. **Power Management Systems**:
- In power supply and distribution systems, FI1010G-VB can effectively handle high current loads, provide stable voltage and current output, and ensure high efficiency and reliability of the system.
2. **Electric Vehicles**:
- In the power control and battery management system of electric vehicles, FI1010G-VB's high current handling capability and low on-resistance make it an ideal choice for battery switches and motor drive circuits, helping to improve overall energy efficiency.
3. **Industrial Power Supplies**:
- FI1010G-VB used in industrial power supplies can support high-power demand devices such as power converters, inverters, etc. Its high current capability and low loss characteristics help reduce energy consumption and improve equipment stability.
4. **Computers and Data Centers**:
- In the power modules of computers and data centers, FI1010G-VB can handle high-power loads and provide efficient power conversion to ensure stable operation and performance optimization of computer systems.
5. **Power Switches**:
- In various power switch applications, FI1010G-VB can be used as a high-power switch, such as switching power supplies, battery switches and load switches. Its low on-resistance and high current handling capability ensure efficient switching operation.
Due to its high current carrying capacity, low on-resistance and high voltage withstand capability, FI1010G-VB MOSFET is suitable for the following fields and modules:
1. **Power Management Systems**:
- In power supply and distribution systems, FI1010G-VB can effectively handle high current loads, provide stable voltage and current output, and ensure high efficiency and reliability of the system.
2. **Electric Vehicles**:
- In the power control and battery management system of electric vehicles, FI1010G-VB's high current handling capability and low on-resistance make it an ideal choice for battery switches and motor drive circuits, helping to improve overall energy efficiency.
3. **Industrial Power Supplies**:
- FI1010G-VB used in industrial power supplies can support high-power demand devices such as power converters, inverters, etc. Its high current capability and low loss characteristics help reduce energy consumption and improve equipment stability.
4. **Computers and Data Centers**:
- In the power modules of computers and data centers, FI1010G-VB can handle high-power loads and provide efficient power conversion to ensure stable operation and performance optimization of computer systems.
5. **Power Switches**:
- In various power switch applications, FI1010G-VB can be used as a high-power switch, such as switching power supplies, battery switches and load switches. Its low on-resistance and high current handling capability ensure efficient switching operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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