Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
60V |
|
2.5V |
50A |
|
|
10mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
60V |
|
2.5V |
50A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
60V |
|
2.5V |
50A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package**: DFN8(5x6) package, compact design suitable for high-density circuit board layout.
- **Configuration**: Single N-channel MOSFET for single-way switch control and power management.
- **VDS (drain-source voltage)**: 60V, maximum drain-source voltage tolerance.
- **VGS (gate-source voltage)**: ±20V, maximum gate-source voltage range.
- **Vth (gate threshold voltage)**: 2.5V, minimum gate voltage required for MOSFET to start conducting.
- **RDS(ON) (on-resistance)**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **ID (drain current)**: 50A, maximum continuous drain current capability, suitable for high current applications.
- **Technology**: Trench technology provides low on-resistance and excellent switching performance.
Domain and module applications：
Application Examples
The high current handling capability and low on-resistance of the FH5406-VB make it widely used in multiple fields and modules:
1. **Power Management System**: Due to its 60V drain-source voltage and 50A high current handling capability, the FH5406-VB is ideal for power management systems such as DC-DC converters and power distribution units. These systems require efficient current management and low power operation, and the low on-resistance of the FH5406-VB provides these requirements.
2. **Battery Management**: In battery-powered devices, the FH5406-VB can be used as a power switch and protection circuit. Its high current capability enables it to handle high current loads, while the low on-resistance helps extend battery life.
3. **Motor Driver**: This MOSFET can be used in motor control and drive applications, especially in scenarios where high current handling is required. The low RDS(ON) and high ID of the FH5406-VB can effectively reduce power consumption in motor drives, improving system efficiency and performance.
4. **Consumer Electronics**: In high-performance consumer electronics such as smartphones and tablets, the FH5406-VB can be used for power management and protection circuits. These devices require compact and efficient power switching devices, and the FH5406-VB's DFN8 package and high current handling capabilities meet these requirements.
5. **Industrial Automation**: In industrial automation equipment, the FH5406-VB can be used for control circuits and power amplifiers. Its high withstand voltage and high current capabilities ensure reliable operation of the equipment, especially in harsh industrial environments.
Through these application areas, the FH5406-VB demonstrates its importance in high-efficiency power management and high-current switching applications, providing excellent performance and reliability for various systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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