中文
English
FDW6923-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**FDW6923-VB** is a dual P-channel MOSFET in TSSOP8 package with excellent electrical performance, suitable for a variety of high-performance electronic designs. This model uses Trench technology to provide low on-resistance and good current handling capability. Its dual P-channel configuration makes it excellent in complex power management and load switching applications, suitable for scenarios requiring high stability and high efficiency.
**FDW6923-VB** is a dual P-channel MOSFET in TSSOP8 package with excellent electrical performance, suitable for a variety of high-performance electronic designs. This model uses Trench technology to provide low on-resistance and good current handling capability. Its dual P-channel configuration makes it excellent in complex power management and load switching applications, suitable for scenarios requiring high stability and high efficiency.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
Detailed parameter description
- **Model**: FDW6923-VB
- **Package**: TSSOP8
- **Configuration**: Dual P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 55mΩ @ VGS = 4.5V
- 36mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -5.2A
- **Technology**: Trench
- **Model**: FDW6923-VB
- **Package**: TSSOP8
- **Configuration**: Dual P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 55mΩ @ VGS = 4.5V
- 36mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -5.2A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power switch management**:
The dual P-channel configuration and low RDS(ON) of FDW6923-VB make it very suitable for use in power switch management systems. In power switch modules, it can effectively control high current switching operations while reducing switching losses and improving the overall efficiency of the system.
2. **Battery protection circuit**:
In battery protection and management systems, FDW6923-VB can be used to prevent overcharge, overdischarge and overcurrent protection measures. Its high withstand voltage and low on-resistance characteristics enable it to reliably protect batteries and extend battery life while improving overall system safety.
3. **Power management module**:
In power management modules, this MOSFET is able to handle higher current loads and can effectively reduce power losses due to its low RDS(ON) characteristics. It is suitable for various power conversion and distribution applications to improve the overall performance of the module.
4. **Home appliances and consumer electronics**:
In home appliances and consumer electronics, FDW6923-VB can be used for load switching and power control applications. Its compact TSSOP8 package is suitable for space-constrained designs, while its low on-resistance can effectively reduce power consumption and improve equipment efficiency and reliability.
1. **Power switch management**:
The dual P-channel configuration and low RDS(ON) of FDW6923-VB make it very suitable for use in power switch management systems. In power switch modules, it can effectively control high current switching operations while reducing switching losses and improving the overall efficiency of the system.
2. **Battery protection circuit**:
In battery protection and management systems, FDW6923-VB can be used to prevent overcharge, overdischarge and overcurrent protection measures. Its high withstand voltage and low on-resistance characteristics enable it to reliably protect batteries and extend battery life while improving overall system safety.
3. **Power management module**:
In power management modules, this MOSFET is able to handle higher current loads and can effectively reduce power losses due to its low RDS(ON) characteristics. It is suitable for various power conversion and distribution applications to improve the overall performance of the module.
4. **Home appliances and consumer electronics**:
In home appliances and consumer electronics, FDW6923-VB can be used for load switching and power control applications. Its compact TSSOP8 package is suitable for space-constrained designs, while its low on-resistance can effectively reduce power consumption and improve equipment efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
