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FDW262P-VB Product details

Product introduction:

1. FDW262P-VB Product Introduction

FDW262P-VB is a single-channel P-channel MOSFET packaged as TSSOP8. This device is designed to handle applications with a maximum load voltage of -30V and can play a role in a variety of power management and switching applications. Its gate-source voltage (VGS) is ±20V, making it stable under a variety of operating conditions. The threshold voltage (Vth) of this MOSFET is -1.7V, which has good switching performance. The on-resistance (RDS(ON)) of FDW262P-VB is 20mΩ at VGS of 4.5V and 16mΩ at VGS of 10V, which shows that it can provide efficient current control at a lower on-resistance. The maximum drain current is -9A, which makes it suitable for applications with high current requirements. Manufactured using Trench technology, the device has excellent switching speed and low conduction loss, suitable for a variety of power switching and management applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TSSOP8 Single-P -30V -1.7V -9A 16mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TSSOP8 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TSSOP8 Single-P -30V -1.7V -9A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TSSOP8 Single-P -30V -1.7V -9A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TSSOP8 Single-P
2. FDW262P-VB Detailed parameter description

- **Package type**: TSSOP8
- **Channel configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS = 4.5V
- 16mΩ @ VGS = 10V
- **Drain current (ID)**: -9A
- **Technology**: Trench

Domain and module applications:

III. Applications and Module Examples

1. **Power Management System**: FDW262P-VB is ideal for use in power management systems, such as in power switches and power protection circuits. Its low on-resistance and high current capability enable it to efficiently control power input and output, improving the overall efficiency and reliability of the system.

2. **Load Switch**: In various load switch applications, this MOSFET can be used as a switching device for the load, enabling efficient control of high current loads. Especially in applications requiring high switching speeds and low power consumption, FDW262P-VB provides excellent performance.

3. **Portable Devices**: For portable devices such as smartphones, tablets, etc., this MOSFET's low on-resistance and high current handling capability make it an effective power switch choice. It enables efficient current control on small circuit boards, extending the battery life of the device.

4. **Motor Driver**: FDW262P-VB also has certain advantages in motor drive applications, and can be used to drive small DC motors or stepper motors. Its good switching performance and low on-resistance enable it to efficiently control the switching state and current flow of the motor.

5. **Battery Management System**: In the battery management system, this MOSFET can be used for battery protection circuits and charge and discharge control to ensure that the battery operates within a safe range. Its high current capability and low power consumption characteristics can effectively manage the battery charge and discharge process and extend the battery life.

The design and performance of the FDW262P-VB make it suitable for a variety of applications requiring efficient current switching and management, providing a reliable solution for a variety of electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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