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FDW2601NZ-VB Product details
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1. FDW2601NZ-VB MOSFET Product Introduction
FDW2601NZ-VB is a high-performance dual N-channel MOSFET, using TSSOP8 package, designed for common source configuration (Common Drain), suitable for 30V drain-source voltage (VDS) applications. This MOSFET has a low on-resistance (RDS(ON)), which is 19mΩ at a gate-source voltage (VGS) of 4.5V and 12mΩ at a VGS of 10V, and a maximum continuous drain current (ID) of 8.6A. Using trench technology, FDW2601NZ-VB is able to provide high efficiency and reliability, and is suitable for a variety of power management and switch control applications, especially in situations where high switching speed and low on-resistance are required.
FDW2601NZ-VB is a high-performance dual N-channel MOSFET, using TSSOP8 package, designed for common source configuration (Common Drain), suitable for 30V drain-source voltage (VDS) applications. This MOSFET has a low on-resistance (RDS(ON)), which is 19mΩ at a gate-source voltage (VGS) of 4.5V and 12mΩ at a VGS of 10V, and a maximum continuous drain current (ID) of 8.6A. Using trench technology, FDW2601NZ-VB is able to provide high efficiency and reliability, and is suitable for a variety of power management and switch control applications, especially in situations where high switching speed and low on-resistance are required.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
2. FDW2601NZ-VB detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Drain-source voltage**: 30V
- **Gate-source voltage**: ±20V
- **Threshold voltage**: 1.7V
- **On-resistance**:
- 19mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum continuous drain current**: 8.6A
- **Technology**: Trench technology
- **Package type**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Drain-source voltage**: 30V
- **Gate-source voltage**: ±20V
- **Threshold voltage**: 1.7V
- **On-resistance**:
- 19mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum continuous drain current**: 8.6A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples of FDW2601NZ-VB
FDW2601NZ-VB MOSFET is very suitable for use in the following fields and modules due to its low on-resistance and high current capability:
1. **Power Management**:
- In power management modules, FDW2601NZ-VB can be used as an efficient switching element to control the on/off of power or regulate current flow. Its low on-resistance helps reduce energy loss and improve the overall energy efficiency of the system.
2. **DC-DC Converters**:
- In DC-DC converters, this MOSFET can be used for efficient energy conversion and regulation. Due to its high current handling capability and low on-resistance, it can effectively reduce energy loss during the conversion process and improve overall efficiency.
3. **Motor Drives**:
- In motor drive systems, FDW2601NZ-VB can be used as a switching element to regulate the drive current of the motor. Its high switching speed and low on-resistance help improve the response speed and efficiency of the motor drive system.
4. **Battery Management Systems**:
- In battery management systems, this MOSFET can be used to control the charging and discharging process of the battery. Its low on-resistance can reduce energy loss in the battery management system, thereby improving the efficiency and life of the battery.
5. **Computers and Consumer Electronics**:
- In computers and various consumer electronics products, FDW2601NZ-VB can be used for power switches and power distribution modules. Its small package design and high efficiency are very suitable for use in compact electronic devices.
FDW2601NZ-VB MOSFET is very suitable for use in the following fields and modules due to its low on-resistance and high current capability:
1. **Power Management**:
- In power management modules, FDW2601NZ-VB can be used as an efficient switching element to control the on/off of power or regulate current flow. Its low on-resistance helps reduce energy loss and improve the overall energy efficiency of the system.
2. **DC-DC Converters**:
- In DC-DC converters, this MOSFET can be used for efficient energy conversion and regulation. Due to its high current handling capability and low on-resistance, it can effectively reduce energy loss during the conversion process and improve overall efficiency.
3. **Motor Drives**:
- In motor drive systems, FDW2601NZ-VB can be used as a switching element to regulate the drive current of the motor. Its high switching speed and low on-resistance help improve the response speed and efficiency of the motor drive system.
4. **Battery Management Systems**:
- In battery management systems, this MOSFET can be used to control the charging and discharging process of the battery. Its low on-resistance can reduce energy loss in the battery management system, thereby improving the efficiency and life of the battery.
5. **Computers and Consumer Electronics**:
- In computers and various consumer electronics products, FDW2601NZ-VB can be used for power switches and power distribution modules. Its small package design and high efficiency are very suitable for use in compact electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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