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FDW256P-VB Product details
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FDW256P-VB MOSFET Product Introduction
FDW256P-VB is a single P-channel MOSFET in a TSSOP8 package, designed for low voltage, high current applications. The device has a maximum drain-source voltage (VDS) of -30V, a gate voltage (VGS) range of ±20V, and a gate threshold voltage (Vth) of -1.7V. Its on-resistance (RDS(ON)) is 20mΩ at VGS of 4.5V and 16mΩ at VGS of 10V, and it can handle a drain current (ID) of up to -9A. FDW256P-VB uses trench technology to ensure stable operation with high efficiency switching performance and low power consumption.
FDW256P-VB is a single P-channel MOSFET in a TSSOP8 package, designed for low voltage, high current applications. The device has a maximum drain-source voltage (VDS) of -30V, a gate voltage (VGS) range of ±20V, and a gate threshold voltage (Vth) of -1.7V. Its on-resistance (RDS(ON)) is 20mΩ at VGS of 4.5V and 16mΩ at VGS of 10V, and it can handle a drain current (ID) of up to -9A. FDW256P-VB uses trench technology to ensure stable operation with high efficiency switching performance and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
FDW256P-VB Detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -30V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS = 4.5V
- 16mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -9A
- **Technology type**: Trench
- **Package type**: TSSOP8
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -30V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS = 4.5V
- 16mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -9A
- **Technology type**: Trench
Domain and module applications：
Application fields and module examples
The characteristics of FDW256P-VB make it excel in applications in many fields. Here are several specific application scenarios:
1. **Power management system**: In power management systems, FDW256P-VB can be used as an efficient load switch. Due to its low on-resistance and high drain current capability, it can effectively control current in power switches and power protection circuits, reduce power losses and improve system efficiency.
2. **Battery protection circuit**: As a P-channel MOSFET, FDW256P-VB is very suitable for use in battery protection circuits to prevent overcharging, over-discharging and short circuits. This MOSFET can provide stable switching performance, helping to protect the battery from overcurrent or voltage damage.
3. **DC-DC converter**: In DC-DC converters, FDW256P-VB can be used as a switching element for efficient current conversion. Its low on-resistance and excellent switching performance help improve the overall efficiency of the converter and reduce heat generation.
4. **Load Switch**: FDW256P-VB is suitable for various load switch applications, especially in low voltage circuits that require high current handling. It can stably control the start and stop of the load, improving the reliability and performance of the system.
These application scenarios demonstrate the advantages of FDW256P-VB MOSFET in efficient current management and low power consumption applications, providing a reliable solution for modern electronic devices.
The characteristics of FDW256P-VB make it excel in applications in many fields. Here are several specific application scenarios:
1. **Power management system**: In power management systems, FDW256P-VB can be used as an efficient load switch. Due to its low on-resistance and high drain current capability, it can effectively control current in power switches and power protection circuits, reduce power losses and improve system efficiency.
2. **Battery protection circuit**: As a P-channel MOSFET, FDW256P-VB is very suitable for use in battery protection circuits to prevent overcharging, over-discharging and short circuits. This MOSFET can provide stable switching performance, helping to protect the battery from overcurrent or voltage damage.
3. **DC-DC converter**: In DC-DC converters, FDW256P-VB can be used as a switching element for efficient current conversion. Its low on-resistance and excellent switching performance help improve the overall efficiency of the converter and reduce heat generation.
4. **Load Switch**: FDW256P-VB is suitable for various load switch applications, especially in low voltage circuits that require high current handling. It can stably control the start and stop of the load, improving the reliability and performance of the system.
These application scenarios demonstrate the advantages of FDW256P-VB MOSFET in efficient current management and low power consumption applications, providing a reliable solution for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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