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FDW252P-VB Product details
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FDW252P-VB MOSFET Product Introduction
The FDW252P-VB is a P-channel MOSFET in a TSSOP8 package designed for low and medium voltage applications. With a maximum drain-source voltage of -30V and a maximum drain current of -9A, the device is suitable for high-efficiency switching and power management applications. The FDW252P-VB uses Trench technology, has low on-resistance and good switching characteristics, and can provide excellent performance in a compact TSSOP8 package, which is particularly suitable for miniaturized circuits that require high-efficiency switching and low power consumption.
The FDW252P-VB is a P-channel MOSFET in a TSSOP8 package designed for low and medium voltage applications. With a maximum drain-source voltage of -30V and a maximum drain current of -9A, the device is suitable for high-efficiency switching and power management applications. The FDW252P-VB uses Trench technology, has low on-resistance and good switching characteristics, and can provide excellent performance in a compact TSSOP8 package, which is particularly suitable for miniaturized circuits that require high-efficiency switching and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
Detailed parameter description
1. **Package**: TSSOP8
- TSSOP8 (Thin Shrink Small Outline Package, 8-pin thin shrink small outline package) is a compact surface mount package suitable for space-constrained circuit design and provides a high-density packaging solution.
2. **Configuration**: Single-channel P-channel
- Single-channel P-channel MOSFET is mainly used in high-side switching applications and can provide efficient switching control when the load current passes from source to drain.
3. **Drain-source voltage (VDS)**: -30V
- The maximum drain-source voltage is -30V, which is suitable for medium and low voltage applications and can effectively handle negative voltage signals.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum gate-source voltage is ±20V, which ensures the stability and reliability of the device under various operating conditions.
5. **Threshold Voltage (Vth)**: -1.7V
- The threshold voltage is -1.7V, which enables effective conduction at a relatively low gate voltage.
6. **On-Resistance (RDS(ON))**:
- 20mΩ at VGS = 4.5V
- 16mΩ at VGS = 10V
- Low on-resistance reduces power consumption and heat generation during switching, improving overall circuit efficiency.
7. **Continuous Drain Current (ID)**: -9A
- The maximum continuous drain current is -9A, suitable for switching and driving applications with medium current loads.
8. **Technology**: Trench
- Using Trench technology, it provides low on-resistance and high switching speed, ensuring that the MOSFET can still operate efficiently in a compact package.
1. **Package**: TSSOP8
- TSSOP8 (Thin Shrink Small Outline Package, 8-pin thin shrink small outline package) is a compact surface mount package suitable for space-constrained circuit design and provides a high-density packaging solution.
2. **Configuration**: Single-channel P-channel
- Single-channel P-channel MOSFET is mainly used in high-side switching applications and can provide efficient switching control when the load current passes from source to drain.
3. **Drain-source voltage (VDS)**: -30V
- The maximum drain-source voltage is -30V, which is suitable for medium and low voltage applications and can effectively handle negative voltage signals.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum gate-source voltage is ±20V, which ensures the stability and reliability of the device under various operating conditions.
5. **Threshold Voltage (Vth)**: -1.7V
- The threshold voltage is -1.7V, which enables effective conduction at a relatively low gate voltage.
6. **On-Resistance (RDS(ON))**:
- 20mΩ at VGS = 4.5V
- 16mΩ at VGS = 10V
- Low on-resistance reduces power consumption and heat generation during switching, improving overall circuit efficiency.
7. **Continuous Drain Current (ID)**: -9A
- The maximum continuous drain current is -9A, suitable for switching and driving applications with medium current loads.
8. **Technology**: Trench
- Using Trench technology, it provides low on-resistance and high switching speed, ensuring that the MOSFET can still operate efficiently in a compact package.
Domain and module applications：
Application Examples
1. **Power Management**
- FDW252P-VB is suitable for high-side switches in power management circuits, such as controlling current flow in power conversion modules. Its low on-resistance helps reduce power consumption and improve circuit efficiency.
2. **Portable Electronic Devices**
- In portable electronic devices such as smartphones and tablets, FDW252P-VB can be used as a power switch to achieve efficient power control and power saving design.
3. **DC-DC Converter**
- In DC-DC converters, FDW252P-VB acts as a switching element to effectively regulate the voltage conversion process, provide a stable output voltage, and optimize power transmission efficiency.
4. **Load Switch**
- FDW252P-VB's low on-resistance and high current handling capability make it suitable for a variety of load switch applications, including switching control of loads such as small electric motors and solenoid valves.
5. **Battery-powered systems**
- In battery-powered systems, FDW252P-VB can be used in battery protection circuits to achieve efficient battery switching and current management, thereby improving battery efficiency and life.
The compact package, efficient switching characteristics, and low on-resistance of FDW252P-VB make it an excellent choice for applications in power management, portable electronic devices, DC-DC converters, load switches, and battery-powered systems.
1. **Power Management**
- FDW252P-VB is suitable for high-side switches in power management circuits, such as controlling current flow in power conversion modules. Its low on-resistance helps reduce power consumption and improve circuit efficiency.
2. **Portable Electronic Devices**
- In portable electronic devices such as smartphones and tablets, FDW252P-VB can be used as a power switch to achieve efficient power control and power saving design.
3. **DC-DC Converter**
- In DC-DC converters, FDW252P-VB acts as a switching element to effectively regulate the voltage conversion process, provide a stable output voltage, and optimize power transmission efficiency.
4. **Load Switch**
- FDW252P-VB's low on-resistance and high current handling capability make it suitable for a variety of load switch applications, including switching control of loads such as small electric motors and solenoid valves.
5. **Battery-powered systems**
- In battery-powered systems, FDW252P-VB can be used in battery protection circuits to achieve efficient battery switching and current management, thereby improving battery efficiency and life.
The compact package, efficient switching characteristics, and low on-resistance of FDW252P-VB make it an excellent choice for applications in power management, portable electronic devices, DC-DC converters, load switches, and battery-powered systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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