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FDW2512NZ-VB Product details
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Product Introduction
FDW2512NZ-VB is a high-performance dual N-channel MOSFET in TSSOP8 package. This MOSFET is configured as a common drain structure and is suitable for dual-channel switching applications. It is manufactured using Trench technology and has excellent switching characteristics and low on-resistance. The maximum drain-source voltage (VDS) of FDW2512NZ-VB is 20V, which is suitable for handling low-voltage switching tasks. The maximum drain current (ID) is 6.6A, which can meet medium current requirements. Its threshold voltage (Vth) ranges from 0.5V to 1.5V, ensuring reliable conduction at low gate-source voltages. Low on-resistance further optimizes current control efficiency.
FDW2512NZ-VB is a high-performance dual N-channel MOSFET in TSSOP8 package. This MOSFET is configured as a common drain structure and is suitable for dual-channel switching applications. It is manufactured using Trench technology and has excellent switching characteristics and low on-resistance. The maximum drain-source voltage (VDS) of FDW2512NZ-VB is 20V, which is suitable for handling low-voltage switching tasks. The maximum drain current (ID) is 6.6A, which can meet medium current requirements. Its threshold voltage (Vth) ranges from 0.5V to 1.5V, ensuring reliable conduction at low gate-source voltages. Low on-resistance further optimizes current control efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
- **Model**: FDW2512NZ-VB
- **Package**: TSSOP8
- **Configuration**: Common Drain Dual N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench technology
- **Model**: FDW2512NZ-VB
- **Package**: TSSOP8
- **Configuration**: Common Drain Dual N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules
The characteristics of FDW2512NZ-VB make it very suitable for use in multiple fields and modules:
1. **DC-DC converter**: Due to its low on-resistance and moderate current handling capability, FDW2512NZ-VB is suitable for use as a switching device in DC-DC converters. In these applications, this MOSFET can effectively handle current conversion, reduce power losses, and improve conversion efficiency.
2. **Load switch**: FDW2512NZ-VB is suitable for load switch applications. Its high current handling capability (6.6A) and low RDS(ON) enable it to provide stable switching performance in current control circuits. This is very effective for scenarios such as power management, load switching, etc.
3. **Power management module**: In the power management module, FDW2512NZ-VB can be used as a power switch or regulator switch. Its low threshold voltage (0.5V ~ 1.5V) allows effective switching under low voltage conditions, suitable for various low-power power systems.
4. **Battery Protection Circuit**: In battery management and protection circuits, FDW2512NZ-VB can be used as an efficient protection switch to control the battery charging and discharging process and prevent overcharging and over-discharging. Its dual N-channel design provides flexible switch configuration for complex battery protection needs.
These applications demonstrate the wide applicability of FDW2512NZ-VB in low voltage and medium current applications, especially in systems that require efficient switching and reliable current control.
The characteristics of FDW2512NZ-VB make it very suitable for use in multiple fields and modules:
1. **DC-DC converter**: Due to its low on-resistance and moderate current handling capability, FDW2512NZ-VB is suitable for use as a switching device in DC-DC converters. In these applications, this MOSFET can effectively handle current conversion, reduce power losses, and improve conversion efficiency.
2. **Load switch**: FDW2512NZ-VB is suitable for load switch applications. Its high current handling capability (6.6A) and low RDS(ON) enable it to provide stable switching performance in current control circuits. This is very effective for scenarios such as power management, load switching, etc.
3. **Power management module**: In the power management module, FDW2512NZ-VB can be used as a power switch or regulator switch. Its low threshold voltage (0.5V ~ 1.5V) allows effective switching under low voltage conditions, suitable for various low-power power systems.
4. **Battery Protection Circuit**: In battery management and protection circuits, FDW2512NZ-VB can be used as an efficient protection switch to control the battery charging and discharging process and prevent overcharging and over-discharging. Its dual N-channel design provides flexible switch configuration for complex battery protection needs.
These applications demonstrate the wide applicability of FDW2512NZ-VB in low voltage and medium current applications, especially in systems that require efficient switching and reliable current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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