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FDW2508PB-VB Product details
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Product Introduction
**FDW2508PB-VB** is a dual P-channel MOSFET in a TSSOP8 package suitable for compact electronic designs. The device combines advanced Trench technology to provide low on-resistance and excellent current handling capabilities, making it particularly suitable for applications that require efficient switching and low power consumption. Its dual P-channel configuration makes it outstanding in dual power systems and load switching applications.
**FDW2508PB-VB** is a dual P-channel MOSFET in a TSSOP8 package suitable for compact electronic designs. The device combines advanced Trench technology to provide low on-resistance and excellent current handling capabilities, making it particularly suitable for applications that require efficient switching and low power consumption. Its dual P-channel configuration makes it outstanding in dual power systems and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
Detailed parameter description
- **Model**: FDW2508PB-VB
- **Package**: TSSOP8
- **Configuration**: Dual P-channel
- **Maximum drain-source voltage (VDS)**: -20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: -1.2V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 13mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -7.5A
- **Technology**: Trench
- **Model**: FDW2508PB-VB
- **Package**: TSSOP8
- **Configuration**: Dual P-channel
- **Maximum drain-source voltage (VDS)**: -20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: -1.2V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 13mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -7.5A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Battery Management System (BMS)**:
The dual P-channel design of the FDW2508PB-VB is ideal for use in battery management systems, especially in dual power switching and battery protection circuits. It can effectively control the battery charging and discharging process to ensure the safety and stability of the system.
2. **Portable Device Power Management**:
In portable devices such as mobile phones and tablets, this MOSFET can be used in power management modules to control the switching power supply and load switching of the device. Its low RDS(ON) characteristics help reduce power consumption and extend battery life, while the TSSOP8 package is also suitable for these space-limited applications.
3. **Load Switching Circuit**:
The FDW2508PB-VB performs well in load switching applications and is suitable for load control circuits in small home appliances and electronic devices. Through its low on-resistance and efficient Trench technology, the device can quickly switch loads while maintaining low power consumption, improving the overall performance of the device.
4. **Communication equipment**:
In the power circuit of communication equipment, this MOSFET can be used to protect and switch circuits to ensure the stability and reliability of the equipment in different working modes. Its dual P-channel design is suitable for complex power management requirements and improves the flexibility and controllability of the system.
1. **Battery Management System (BMS)**:
The dual P-channel design of the FDW2508PB-VB is ideal for use in battery management systems, especially in dual power switching and battery protection circuits. It can effectively control the battery charging and discharging process to ensure the safety and stability of the system.
2. **Portable Device Power Management**:
In portable devices such as mobile phones and tablets, this MOSFET can be used in power management modules to control the switching power supply and load switching of the device. Its low RDS(ON) characteristics help reduce power consumption and extend battery life, while the TSSOP8 package is also suitable for these space-limited applications.
3. **Load Switching Circuit**:
The FDW2508PB-VB performs well in load switching applications and is suitable for load control circuits in small home appliances and electronic devices. Through its low on-resistance and efficient Trench technology, the device can quickly switch loads while maintaining low power consumption, improving the overall performance of the device.
4. **Communication equipment**:
In the power circuit of communication equipment, this MOSFET can be used to protect and switch circuits to ensure the stability and reliability of the equipment in different working modes. Its dual P-channel design is suitable for complex power management requirements and improves the flexibility and controllability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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