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FDW2504P-VB Product details
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Product Introduction
**FDW2504P-VB** is a high-performance P-type MOSFET packaged in TSSOP8. The device uses Trench technology to provide low on-state resistance (RDS(ON)) and high drain current (ID), suitable for various applications requiring efficient power switches. Its maximum drain-source voltage (VDS) is -30V, the gate-source voltage (VGS) is ±20V, and it has a low gate threshold voltage (Vth), ensuring reliable operation at lower gate voltages. FDW2504P-VB is very suitable for applications such as efficient power management, load switching, and power distribution.
**FDW2504P-VB** is a high-performance P-type MOSFET packaged in TSSOP8. The device uses Trench technology to provide low on-state resistance (RDS(ON)) and high drain current (ID), suitable for various applications requiring efficient power switches. Its maximum drain-source voltage (VDS) is -30V, the gate-source voltage (VGS) is ±20V, and it has a low gate threshold voltage (Vth), ensuring reliable operation at lower gate voltages. FDW2504P-VB is very suitable for applications such as efficient power management, load switching, and power distribution.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
Detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Single P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-state resistance (RDS(ON))**:
- 20mΩ @ VGS = 4.5V
- 16mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -9A
- **Technology**: Trench technology
- **Package type**: TSSOP8
- **Configuration**: Single P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-state resistance (RDS(ON))**:
- 20mΩ @ VGS = 4.5V
- 16mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -9A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
1. **Power management systems**:
FDW2504P-VB excels in power management systems, especially in high-efficiency power switch and load switch applications. Its low RDS(ON) and high current handling capability make it an ideal choice for power switches in portable electronic devices and consumer electronics.
2. **Load switch applications**:
This P-type MOSFET is commonly used in various load switch applications, such as in battery management systems to control the flow of current and ensure that the device can operate safely and reliably under different operating conditions.
3. **Power distribution modules**:
FDW2504P-VB is suitable for use in power distribution modules, where it can provide efficient current distribution and protection functions in situations where precise current control is required, such as in multi-way power distribution and protection circuits.
4. **Automotive electronics**:
In the field of automotive electronics, FDW2504P-VB is suitable for power control and protection circuits. Its high reliability and high efficiency enable it to maintain stable performance in harsh environments, making it suitable for vehicle power management and load control modules.
5. **Industrial control systems**:
This MOSFET is also suitable for industrial control systems, such as power control and protection circuits in automation equipment. Its high current capability and low on-resistance enable it to perform well in high-power applications, ensuring system stability and reliability.
1. **Power management systems**:
FDW2504P-VB excels in power management systems, especially in high-efficiency power switch and load switch applications. Its low RDS(ON) and high current handling capability make it an ideal choice for power switches in portable electronic devices and consumer electronics.
2. **Load switch applications**:
This P-type MOSFET is commonly used in various load switch applications, such as in battery management systems to control the flow of current and ensure that the device can operate safely and reliably under different operating conditions.
3. **Power distribution modules**:
FDW2504P-VB is suitable for use in power distribution modules, where it can provide efficient current distribution and protection functions in situations where precise current control is required, such as in multi-way power distribution and protection circuits.
4. **Automotive electronics**:
In the field of automotive electronics, FDW2504P-VB is suitable for power control and protection circuits. Its high reliability and high efficiency enable it to maintain stable performance in harsh environments, making it suitable for vehicle power management and load control modules.
5. **Industrial control systems**:
This MOSFET is also suitable for industrial control systems, such as power control and protection circuits in automation equipment. Its high current capability and low on-resistance enable it to perform well in high-power applications, ensuring system stability and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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