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FDW2502PZ-VB Product details

Product introduction:

1. FDW2502PZ-VB Product Introduction

FDW2502PZ-VB is a dual P-channel MOSFET integrated in a TSSOP8 package. This design provides an efficient current switching solution for a variety of compact electronic devices. Its drain-source voltage (VDS) is -20V and its gate-source voltage (VGS) is ±20V, enabling it to cope with a variety of voltage requirements. The device's on-resistance is 18mΩ at a VGS of 4.5V and 13mΩ at a VGS of 10V, indicating that it has low conduction losses. FDW2502PZ-VB supports a current capability of up to -7.5A per channel and is manufactured using Trench technology, providing excellent switching performance and low on-resistance. It is ideal for applications such as portable devices, power management modules, and load switches that require efficient power management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TSSOP8 Dual-P+P -20V -1.2V -7.5A 13mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TSSOP8 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TSSOP8 Dual-P+P -20V -1.2V -7.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TSSOP8 Dual-P+P -20V -1.2V -7.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TSSOP8 Dual-P+P
2. FDW2502PZ-VB Detailed parameter description

- **Package type**: TSSOP8
- **Channel configuration**: Dual-P+P-Channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.2V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 13mΩ @ VGS = 10V
- **Drain current (ID)**: -7.5A
- **Technology**: Trench

Domain and module applications:

III. Applications and Module Examples

1. **Portable Devices**: The compact package and efficient P-channel MOSFET design of the FDW2502PZ-VB are ideal for portable electronic products such as smartphones, tablets and wearable devices. These devices often require efficient current control and power management in a limited space, and the low on-resistance of the device helps extend battery life and reduce heat generation.

2. **Power Management Module**: This MOSFET can be used as a core component in a power management module, responsible for effective power switching and voltage regulation in the circuit. Its dual-channel configuration allows for greater flexibility in dual power supplies or complex power management circuits.

3. **Load Switch**: The FDW2502PZ-VB performs well in load switch applications and is suitable for a variety of current-intensive devices. Its low RDS(ON) value ensures low-power operation under high current conditions, thereby improving the overall efficiency of the system.

4. **Motor Driver**: In low-voltage motor drive applications, this MOSFET is able to provide efficient current control, especially in scenarios that require fast response and high efficiency. It can be used to drive small DC motors and stepper motors.

5. **Battery Management System**: In a battery management system (BMS), the FDW2502PZ-VB can be used to protect and control the battery charging and discharging process. Its stable performance and low power consumption make it an ideal choice for battery management applications, which can effectively extend the battery life.

Overall, the FDW2502PZ-VB is a MOSFET with a wide range of applications, suitable for a variety of electronic devices and modules that require efficient power conversion and management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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