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FDW2502P-VB Product details
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1. FDW2502P-VB MOSFET Product Introduction
FDW2502P-VB is a high-efficiency dual P-channel MOSFET designed in a compact TSSOP8 package, designed for space-constrained applications. This MOSFET has a dual P-channel configuration, a drain-source voltage (VDS) of -30V, and a gate-source voltage (VGS) range of ±20V, suitable for a variety of power management and switch control applications. Using trench technology, the FDW2502P-VB has a low on-resistance (RDS(ON)), 55mΩ at VGS of 4.5V and 36mΩ at VGS of 10V, and can handle a continuous drain current (ID) of up to -5.2A. This device performs well in power management modules and low-voltage switching applications.
FDW2502P-VB is a high-efficiency dual P-channel MOSFET designed in a compact TSSOP8 package, designed for space-constrained applications. This MOSFET has a dual P-channel configuration, a drain-source voltage (VDS) of -30V, and a gate-source voltage (VGS) range of ±20V, suitable for a variety of power management and switch control applications. Using trench technology, the FDW2502P-VB has a low on-resistance (RDS(ON)), 55mΩ at VGS of 4.5V and 36mΩ at VGS of 10V, and can handle a continuous drain current (ID) of up to -5.2A. This device performs well in power management modules and low-voltage switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
2. FDW2502P-VB detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Dual-P+P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 55mΩ @ VGS = 4.5V
- 36mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: -5.2A
- **Technology**: Trench technology
- **Package type**: TSSOP8
- **Configuration**: Dual-P+P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 55mΩ @ VGS = 4.5V
- 36mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: -5.2A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples of FDW2502P-VB
FDW2502P-VB MOSFET is suitable for the following fields and modules due to its excellent electrical performance and compact package design:
1. **Mobile Device Power Management**:
- In mobile devices such as smartphones and tablets, FDW2502P-VB can be used in battery management modules (BMS) and power regulators, because its low on-resistance and dual P-channel design can efficiently manage power distribution, extend battery life and improve the energy efficiency of the device.
2. **Portable Electronics**:
- In portable electronic products such as handheld devices and wearable devices, this MOSFET can be used as an efficient switching element in the power on/off control circuit. Its compact TSSOP8 package is very suitable for space-constrained designs.
3. **DC-DC Converters**:
- FDW2502P-VB can be used for efficient energy conversion in DC-DC step-down converters. Due to its lower RDS(ON) and higher current capability, it can help improve conversion efficiency and reduce energy loss.
4. **Low Voltage Power Switching**:
- In low voltage power switching applications, FDW2502P-VB can be used to control the on and off of power, and is suitable for various power modules, switching power supplies and power adapters, helping to achieve efficient and reliable power management.
5. **Computers and Server Systems**:
- In computer and server power modules, FDW2502P-VB can be used as a power management switch to manage and regulate the flow of current to ensure system stability and efficiency.
FDW2502P-VB MOSFET is suitable for the following fields and modules due to its excellent electrical performance and compact package design:
1. **Mobile Device Power Management**:
- In mobile devices such as smartphones and tablets, FDW2502P-VB can be used in battery management modules (BMS) and power regulators, because its low on-resistance and dual P-channel design can efficiently manage power distribution, extend battery life and improve the energy efficiency of the device.
2. **Portable Electronics**:
- In portable electronic products such as handheld devices and wearable devices, this MOSFET can be used as an efficient switching element in the power on/off control circuit. Its compact TSSOP8 package is very suitable for space-constrained designs.
3. **DC-DC Converters**:
- FDW2502P-VB can be used for efficient energy conversion in DC-DC step-down converters. Due to its lower RDS(ON) and higher current capability, it can help improve conversion efficiency and reduce energy loss.
4. **Low Voltage Power Switching**:
- In low voltage power switching applications, FDW2502P-VB can be used to control the on and off of power, and is suitable for various power modules, switching power supplies and power adapters, helping to achieve efficient and reliable power management.
5. **Computers and Server Systems**:
- In computer and server power modules, FDW2502P-VB can be used as a power management switch to manage and regulate the flow of current to ensure system stability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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