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FDW2501NZ-VB Product details
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FDW2501NZ-VB MOSFET Product Introduction
FDW2501NZ-VB is a dual N-channel MOSFET in a TSSOP8 package, configured as a common drain structure. The device has a drain-source voltage (VDS) of 20V, a gate voltage (VGS) range of ±20V, and a gate threshold voltage (Vth) range of 0.5V to 1.5V. It has an on-resistance (RDS(ON)) of 32mΩ at VGS of 2.5V and 22mΩ at VGS of 4.5V, and can handle a drain current (ID) of up to 6.6A. FDW2501NZ-VB uses advanced trench technology to ensure high-efficiency performance in low-voltage and high-current applications.
FDW2501NZ-VB is a dual N-channel MOSFET in a TSSOP8 package, configured as a common drain structure. The device has a drain-source voltage (VDS) of 20V, a gate voltage (VGS) range of ±20V, and a gate threshold voltage (Vth) range of 0.5V to 1.5V. It has an on-resistance (RDS(ON)) of 32mΩ at VGS of 2.5V and 22mΩ at VGS of 4.5V, and can handle a drain current (ID) of up to 6.6A. FDW2501NZ-VB uses advanced trench technology to ensure high-efficiency performance in low-voltage and high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
FDW2501NZ-VB Detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Common Drain Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6.6A
- **Technology type**: Trench
- **Package type**: TSSOP8
- **Configuration**: Common Drain Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6.6A
- **Technology type**: Trench
Domain and module applications：
Applications and Module Examples
The characteristics of the FDW2501NZ-VB enable it to perform well in a variety of low-voltage, high-current applications. Here are a few typical application areas:
1. **Battery protection circuit**: Due to the common drain configuration and low on-resistance characteristics of the FDW2501NZ-VB, it is very suitable for use in battery protection circuits, especially in protection modules for lithium-ion battery packs. It can effectively control the flow of current to prevent the battery from overcharging, over-discharging or short-circuiting, thereby extending the battery life.
2. **Load switch**: The FDW2501NZ-VB is suitable as a load switch in low-voltage systems, and can control the on and off of current in power management circuits. Its low on-resistance and high current capability ensure efficient operation of the circuit while reducing power loss.
3. **DC-DC Converter**: In low-voltage DC-DC converters, FDW2501NZ-VB acts as a MOSFET for synchronous rectifiers, which can improve conversion efficiency, reduce heat generation, and provide higher system efficiency.
4. **Portable Device Power Management**: Due to its compact TSSOP8 package and low power consumption, FDW2501NZ-VB is ideal for use in power management modules for portable devices such as smartphones and tablets, helping these devices achieve longer battery life and more stable power supply.
These application examples show that FDW2501NZ-VB MOSFET is suitable for a variety of low-voltage power applications that require efficient current management and low on-resistance, providing a reliable solution for portable and low-power devices.
The characteristics of the FDW2501NZ-VB enable it to perform well in a variety of low-voltage, high-current applications. Here are a few typical application areas:
1. **Battery protection circuit**: Due to the common drain configuration and low on-resistance characteristics of the FDW2501NZ-VB, it is very suitable for use in battery protection circuits, especially in protection modules for lithium-ion battery packs. It can effectively control the flow of current to prevent the battery from overcharging, over-discharging or short-circuiting, thereby extending the battery life.
2. **Load switch**: The FDW2501NZ-VB is suitable as a load switch in low-voltage systems, and can control the on and off of current in power management circuits. Its low on-resistance and high current capability ensure efficient operation of the circuit while reducing power loss.
3. **DC-DC Converter**: In low-voltage DC-DC converters, FDW2501NZ-VB acts as a MOSFET for synchronous rectifiers, which can improve conversion efficiency, reduce heat generation, and provide higher system efficiency.
4. **Portable Device Power Management**: Due to its compact TSSOP8 package and low power consumption, FDW2501NZ-VB is ideal for use in power management modules for portable devices such as smartphones and tablets, helping these devices achieve longer battery life and more stable power supply.
These application examples show that FDW2501NZ-VB MOSFET is suitable for a variety of low-voltage power applications that require efficient current management and low on-resistance, providing a reliable solution for portable and low-power devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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