Product introduction：
FDV304P-VB MOSFET Product Introduction
The FDV304P-VB is a highly efficient single P-channel MOSFET in a compact SOT23-3 package, ideal for space-constrained applications. The MOSFET supports drain-source voltage (VDS) up to -20V and gate-source voltage (VGS) of ±12V, and its gate threshold voltage (Vth) is -0.8V, enabling it to operate reliably in low-voltage control environments. The FDV304P-VB has a low on-resistance characteristic, effectively reducing conduction losses. Its on-resistance (RDS(ON)) shows good performance at different gate voltages, 80mΩ at VGS = 2.5V, 65mΩ at VGS = 4.5V, and 60mΩ at VGS = 10V, with a maximum drain current (ID) of -4A. Using advanced Trench technology, this MOSFET provides extremely low conduction losses and good switching performance, suitable for a variety of low voltage power and control applications.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P |
-20V |
12（±V） |
-0.8V |
-4A |
80mΩ |
|
60mΩ |
|
Detailed parameter description
- **Package**: SOT23-3, small package, suitable for compact design.
- **Configuration**: Single P-channel MOSFET, suitable for low voltage switching and control applications.
- **VDS (drain-source voltage)**: -20V, maximum voltage between drain and source.
- **VGS (gate-source voltage)**: ±12V, maximum voltage difference between gate and source.
- **Vth (gate threshold voltage)**: -0.8V, minimum gate voltage required for MOSFET to start conducting.
- **RDS(ON) (on resistance)**:
- 80mΩ @ VGS = 2.5V
- 65mΩ @ VGS = 4.5V
- 60mΩ @ VGS = 10V
- **ID (drain current)**: -4A, maximum continuous drain current.
- **Technology**: Trench technology, providing low on-resistance and high efficiency.
Domain and module applications：
Application Examples
The compact package and low on-resistance of the FDV304P-VB make it widely used in multiple fields and modules:
1. **Portable Devices**: In portable devices such as smartphones, tablets, and wearable devices, the small package and low voltage operation characteristics of the FDV304P-VB make it ideal for use in power management and battery protection circuits. It can provide efficient current switching and control in a limited space.
2. **Power Management Modules**: This MOSFET can be used in low-voltage power management modules such as DC-DC converters and voltage regulators. Its low on-resistance can reduce power consumption and improve power conversion efficiency, making it ideal for applications with high energy efficiency requirements.
3. **Signal Switching**: In signal switching and routing applications, the low on-resistance characteristics of the FDV304P-VB allow it to efficiently switch signals at a lower voltage, making it suitable for control and switching of data communication equipment and interface circuits.
4. **Consumer Electronics**: In various consumer electronics products, such as digital cameras, MP3 players and other home electronic devices, the compact design and high-efficiency performance of the FDV304P-VB enable it to effectively manage low-voltage power and provide reliable switching operations.
5. **Automotive Electronics**: Although this product is mainly aimed at low-power applications, it can also be used in some automotive electronic systems to control low-power auxiliary circuits, such as the power supply of sensors and microcontrollers, helping to optimize the overall energy efficiency of the vehicle electronic system.
The FDV304P-VB is a MOSFET that integrates low on-resistance, small package and low-voltage operation capability, suitable for a variety of low-power switching and power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
