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FDV301N-VB Product details
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Product Introduction
FDV301N-VB is an N-channel MOSFET in a SOT23-3 package with a compact size, which is ideal for space-constrained applications. The device uses Trench technology and can perform well in low-voltage and high-current applications. With a maximum drain-source voltage (VDS) of 20V, the FDV301N-VB can handle lower voltage switching tasks, while its maximum drain current (ID) is 6A, suitable for medium current requirements. Its threshold voltage (Vth) ranges from 0.5V to 1.5V, ensuring reliable switching operation under low gate-source voltage conditions. The low on-resistance gives it an advantage in efficient current control.
FDV301N-VB is an N-channel MOSFET in a SOT23-3 package with a compact size, which is ideal for space-constrained applications. The device uses Trench technology and can perform well in low-voltage and high-current applications. With a maximum drain-source voltage (VDS) of 20V, the FDV301N-VB can handle lower voltage switching tasks, while its maximum drain current (ID) is 6A, suitable for medium current requirements. Its threshold voltage (Vth) ranges from 0.5V to 1.5V, ensuring reliable switching operation under low gate-source voltage conditions. The low on-resistance gives it an advantage in efficient current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 20V | 0.5~1.5V | 6A | 42mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Detailed parameter description
- **Model**: FDV301N-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 42mΩ @ VGS = 2.5V
- 28mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench technology
- **Model**: FDV301N-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 42mΩ @ VGS = 2.5V
- 28mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench technology
Domain and module applications：
Applications and Modules
The design features of the FDV301N-VB make it ideal for the following applications and modules:
1. **Portable Electronics**: Due to its small SOT23-3 package and low on-resistance, the FDV301N-VB is well suited for portable electronic devices such as smartphones, tablets, and wearable devices. In these devices, MOSFETs can be used in power management, battery protection, and power switching circuits to provide reliable and efficient current control.
2. **DC-DC Converters**: In low-voltage DC-DC converters, the FDV301N-VB can be used as a switching device, and its low RDS(ON) ensures low power loss and high conversion efficiency. This MOSFET is particularly suitable for applications that require low voltage conversion, such as portable power supplies and embedded systems.
3. **Load Switch**: In applications where effective control of the load is required, the FDV301N-VB can be used as an efficient load switch. Its low threshold voltage and high current handling capability enable efficient switching functions on small circuit boards, such as in consumer electronics and sensor modules.
4. **Battery Management System**: FDV301N-VB is also well suited for battery management systems, especially in lithium battery protection circuits. It can be used as a current control switch to prevent overcharging or over-discharging of the battery, while providing a reliable current path during battery charging and discharging.
These application areas show that FDV301N-VB is a very suitable MOSFET operating under low voltage and medium current conditions, especially for electronic devices and systems that require efficient and compact design.
The design features of the FDV301N-VB make it ideal for the following applications and modules:
1. **Portable Electronics**: Due to its small SOT23-3 package and low on-resistance, the FDV301N-VB is well suited for portable electronic devices such as smartphones, tablets, and wearable devices. In these devices, MOSFETs can be used in power management, battery protection, and power switching circuits to provide reliable and efficient current control.
2. **DC-DC Converters**: In low-voltage DC-DC converters, the FDV301N-VB can be used as a switching device, and its low RDS(ON) ensures low power loss and high conversion efficiency. This MOSFET is particularly suitable for applications that require low voltage conversion, such as portable power supplies and embedded systems.
3. **Load Switch**: In applications where effective control of the load is required, the FDV301N-VB can be used as an efficient load switch. Its low threshold voltage and high current handling capability enable efficient switching functions on small circuit boards, such as in consumer electronics and sensor modules.
4. **Battery Management System**: FDV301N-VB is also well suited for battery management systems, especially in lithium battery protection circuits. It can be used as a current control switch to prevent overcharging or over-discharging of the battery, while providing a reliable current path during battery charging and discharging.
These application areas show that FDV301N-VB is a very suitable MOSFET operating under low voltage and medium current conditions, especially for electronic devices and systems that require efficient and compact design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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