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FDU8870-VB Product details
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Product Introduction
**FDU8870-VB** is a high-performance single N-channel MOSFET in TO251 package. It uses Trench technology, has excellent on-resistance and high current carrying capacity, and is suitable for high-efficiency switching and amplification applications. Its low RDS(ON) characteristics make it very suitable for high-frequency and high-power density electronic products.
**FDU8870-VB** is a high-performance single N-channel MOSFET in TO251 package. It uses Trench technology, has excellent on-resistance and high current carrying capacity, and is suitable for high-efficiency switching and amplification applications. Its low RDS(ON) characteristics make it very suitable for high-frequency and high-power density electronic products.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: FDU8870-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
- **Model**: FDU8870-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management**:
The low RDS(ON) characteristics of the FDU8870-VB make it ideal for use in power management modules. In DC-DC converters and power switches, this MOSFET can effectively reduce switching losses and improve overall efficiency.
2. **Electric Vehicles**:
In the motor drive and battery management system of electric vehicles, the FDU8870-VB can be used to control the switching operation of the motor and the charging and discharging process of the battery due to its high current carrying capacity and low on-resistance, improving the performance and stability of the system.
3. **High Power Switching**:
This MOSFET performs well in applications that require high power switching, such as high power LED drive circuits and power amplifiers. Its low RDS(ON) makes thermal management in high power environments more efficient and extends the service life of components.
4. **Consumer Electronics**:
In consumer electronics such as computer motherboards, laptops, and other portable devices, FDU8870-VB can be used for power switching and load switching, providing efficient and reliable performance. Its compact TO251 package is also suitable for applications with limited space.
1. **Power Management**:
The low RDS(ON) characteristics of the FDU8870-VB make it ideal for use in power management modules. In DC-DC converters and power switches, this MOSFET can effectively reduce switching losses and improve overall efficiency.
2. **Electric Vehicles**:
In the motor drive and battery management system of electric vehicles, the FDU8870-VB can be used to control the switching operation of the motor and the charging and discharging process of the battery due to its high current carrying capacity and low on-resistance, improving the performance and stability of the system.
3. **High Power Switching**:
This MOSFET performs well in applications that require high power switching, such as high power LED drive circuits and power amplifiers. Its low RDS(ON) makes thermal management in high power environments more efficient and extends the service life of components.
4. **Consumer Electronics**:
In consumer electronics such as computer motherboards, laptops, and other portable devices, FDU8870-VB can be used for power switching and load switching, providing efficient and reliable performance. Its compact TO251 package is also suitable for applications with limited space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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