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FDU8647L-VB Product details
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Product Introduction
**FDU8647L-VB** is a high-performance N-type MOSFET packaged in TO251. It uses Trench technology to provide low on-state resistance and high drain current, suitable for various power switching and power management applications. The MOSFET has a maximum drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V. It has a low gate threshold voltage (Vth) to ensure effective switching at lower gate voltages. Its low RDS(ON) value can effectively reduce power consumption and heat in high current applications, showing excellent performance and reliability.
**FDU8647L-VB** is a high-performance N-type MOSFET packaged in TO251. It uses Trench technology to provide low on-state resistance and high drain current, suitable for various power switching and power management applications. The MOSFET has a maximum drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V. It has a low gate threshold voltage (Vth) to ensure effective switching at lower gate voltages. Its low RDS(ON) value can effectively reduce power consumption and heat in high current applications, showing excellent performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-state resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V
- 13mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 55A
- **Technology**: Trench technology
- **Package type**: TO251
- **Configuration**: Single N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-state resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V
- 13mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 55A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
1. **High-efficiency power switch**:
FDU8647L-VB has very low RDS(ON) and high drain current capability, making it very suitable for use as a high-efficiency power switch. In power management modules, such as DC-DC converters and battery-powered systems, it can effectively reduce power consumption and heat, and improve the overall efficiency of the system.
2. **Motor drive**:
In motor drive applications, the high current handling capability and low resistance characteristics of FDU8647L-VB make it an ideal choice. For example, in a DC motor drive system, this MOSFET can be used as a switching element for the motor, providing efficient and stable current control.
3. **Switch mode power supply (SMPS)**:
In a switch mode power supply (SMPS), the low RDS(ON) and high drain current capability of FDU8647L-VB can significantly improve switching efficiency and reduce power consumption, and is suitable for a variety of AC-DC and DC-DC conversion applications.
4. **Power Management Module**:
This MOSFET performs well in power management modules, especially in applications with high current switching requirements, such as power distribution and voltage regulation modules. Its high current capability can effectively support high power requirements in the system.
5. **Industrial Power System**:
In industrial power systems, such as power supply and distribution systems, the high current handling capability and low on-resistance of the FDU8647L-VB enable it to withstand higher power loads, ensuring system stability and reliability.
1. **High-efficiency power switch**:
FDU8647L-VB has very low RDS(ON) and high drain current capability, making it very suitable for use as a high-efficiency power switch. In power management modules, such as DC-DC converters and battery-powered systems, it can effectively reduce power consumption and heat, and improve the overall efficiency of the system.
2. **Motor drive**:
In motor drive applications, the high current handling capability and low resistance characteristics of FDU8647L-VB make it an ideal choice. For example, in a DC motor drive system, this MOSFET can be used as a switching element for the motor, providing efficient and stable current control.
3. **Switch mode power supply (SMPS)**:
In a switch mode power supply (SMPS), the low RDS(ON) and high drain current capability of FDU8647L-VB can significantly improve switching efficiency and reduce power consumption, and is suitable for a variety of AC-DC and DC-DC conversion applications.
4. **Power Management Module**:
This MOSFET performs well in power management modules, especially in applications with high current switching requirements, such as power distribution and voltage regulation modules. Its high current capability can effectively support high power requirements in the system.
5. **Industrial Power System**:
In industrial power systems, such as power supply and distribution systems, the high current handling capability and low on-resistance of the FDU8647L-VB enable it to withstand higher power loads, ensuring system stability and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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