FDU8453LZ-VB Product details
Product introduction:
FDU8453LZ-VB is a high-performance N-channel MOSFET with a TO251 package type. This MOSFET is designed for medium to high voltage applications, with a drain-source voltage (VDS) of up to 40V and supports a gate-source voltage of ±20V. Its threshold voltage is 2.5V, allowing the device to work effectively at a lower gate-source voltage. FDU8453LZ-VB uses Trench technology to provide very low on-resistance of 6.5mΩ (at VGS = 4.5V) and 5mΩ (at VGS = 10V), allowing low power consumption and high efficiency in high current environments. Its drain current handling capability of up to 85A enables it to operate stably in high load applications. FDU8453LZ-VB is suitable for a variety of switching applications that require high current and high efficiency, especially in areas such as power management and motor drive.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Package type**: TO251
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6.5mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain current (ID)**: 85A
- **Technology**: Trench
Domain and module applications:
1. **Power Management System**: The FDU8453LZ-VB is ideally suited for use in efficient power management systems due to its extremely low on-resistance and high current handling capability. In switch mode power supplies (SMPS), DC-DC converters, and other power conversion applications, low on-resistance helps reduce energy loss and improves the overall efficiency of the system.
2. **Motor Driver**: In motor drivers, the high current handling capability and low on-resistance of the FDU8453LZ-VB enable it to effectively control the current of the motor, thereby improving the efficiency and reliability of the motor drive. This MOSFET is suitable for applications such as DC motor drive and stepper motor drive.
3. **Power Switching Circuit**: This MOSFET is also suitable for a variety of power switching circuits, including load switches, protection switches, etc. Its high drain current capability and low on-resistance ensure efficient current control during switching operations, making it suitable for switching circuit applications that require high reliability.
4. **LED Driver**: In LED driver applications, FDU8453LZ-VB can be used as an efficient switching component to help stabilize the current of LEDs and improve the performance and life of LED lighting systems.
5. **Automotive Electronics**: In automotive electronic systems, this MOSFET can be used in high-power load control, battery management systems, and electric vehicle drive systems. Its high current capability and low power consumption characteristics enable it to have good performance in automotive electronic applications.
In general, FDU8453LZ-VB is a superior N-channel MOSFET suitable for a variety of high-current and high-efficiency applications, and can provide stable performance under various harsh working conditions.
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