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FDU8453LZ-VB Product details

Product introduction:

1. FDU8453LZ-VB Product Introduction

FDU8453LZ-VB is a high-performance N-channel MOSFET with a TO251 package type. This MOSFET is designed for medium to high voltage applications, with a drain-source voltage (VDS) of up to 40V and supports a gate-source voltage of ±20V. Its threshold voltage is 2.5V, allowing the device to work effectively at a lower gate-source voltage. FDU8453LZ-VB uses Trench technology to provide very low on-resistance of 6.5mΩ (at VGS = 4.5V) and 5mΩ (at VGS = 10V), allowing low power consumption and high efficiency in high current environments. Its drain current handling capability of up to 85A enables it to operate stably in high load applications. FDU8453LZ-VB is suitable for a variety of switching applications that require high current and high efficiency, especially in areas such as power management and motor drive.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 40V 2.5V 85A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 40V 2.5V 85A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 40V 2.5V 85A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N
2. FDU8453LZ-VB Detailed parameter description

- **Package type**: TO251
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6.5mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain current (ID)**: 85A
- **Technology**: Trench

Domain and module applications:

III. Applications and Module Examples

1. **Power Management System**: The FDU8453LZ-VB is ideally suited for use in efficient power management systems due to its extremely low on-resistance and high current handling capability. In switch mode power supplies (SMPS), DC-DC converters, and other power conversion applications, low on-resistance helps reduce energy loss and improves the overall efficiency of the system.

2. **Motor Driver**: In motor drivers, the high current handling capability and low on-resistance of the FDU8453LZ-VB enable it to effectively control the current of the motor, thereby improving the efficiency and reliability of the motor drive. This MOSFET is suitable for applications such as DC motor drive and stepper motor drive.

3. **Power Switching Circuit**: This MOSFET is also suitable for a variety of power switching circuits, including load switches, protection switches, etc. Its high drain current capability and low on-resistance ensure efficient current control during switching operations, making it suitable for switching circuit applications that require high reliability.

4. **LED Driver**: In LED driver applications, FDU8453LZ-VB can be used as an efficient switching component to help stabilize the current of LEDs and improve the performance and life of LED lighting systems.

5. **Automotive Electronics**: In automotive electronic systems, this MOSFET can be used in high-power load control, battery management systems, and electric vehicle drive systems. Its high current capability and low power consumption characteristics enable it to have good performance in automotive electronic applications.

In general, FDU8453LZ-VB is a superior N-channel MOSFET suitable for a variety of high-current and high-efficiency applications, and can provide stable performance under various harsh working conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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