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FDU8451-VB Product details
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1. FDU8451-VB MOSFET Product Introduction
FDU8451-VB is a high-performance single N-channel MOSFET in TO251 package. With a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) range of ±20V, this MOSFET is suitable for a variety of medium and low voltage switching and control applications. Using trench technology, the FDU8451-VB has an extremely low on-resistance (RDS(ON)), which is 14mΩ and 13mΩ at VGS of 4.5V and 10V respectively, and can handle a continuous drain current (ID) of up to 55A. This makes it excel in applications requiring high current and low conduction losses, and is particularly suitable for efficient power management and switching applications.
FDU8451-VB is a high-performance single N-channel MOSFET in TO251 package. With a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) range of ±20V, this MOSFET is suitable for a variety of medium and low voltage switching and control applications. Using trench technology, the FDU8451-VB has an extremely low on-resistance (RDS(ON)), which is 14mΩ and 13mΩ at VGS of 4.5V and 10V respectively, and can handle a continuous drain current (ID) of up to 55A. This makes it excel in applications requiring high current and low conduction losses, and is particularly suitable for efficient power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description of FDU8451-VB
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V
- 13mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 55A
- **Technology**: Trench technology
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V
- 13mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 55A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples of FDU8451-VB
FDU8451-VB MOSFET is suitable for the following fields and modules due to its superior performance and electrical parameters:
1. **Power Management Systems**:
- In power management applications, the low on-resistance and high drain current capability of FDU8451-VB make it very suitable for use as a high-efficiency switch. For example, it can be used as a high-current switch in a DC-DC converter to help reduce power loss and improve overall efficiency.
2. **Electric Vehicles**:
- In the power control system of electric vehicles, FDU8451-VB can be used in high-current drive applications such as battery management systems (BMS) and motor control modules. Its high current carrying capacity and low on-resistance can effectively support the high power requirements of electric vehicles.
3. **High-Power Switching**:
- The high current handling capability and low on-resistance of the FDU8451-VB make it suitable for high-power switching applications, such as in power switches and power modules for industrial equipment, ensuring efficient and stable current switching operations.
4. **Power Electronics Devices**:
- In various power electronic devices, such as power converters and inverters, the FDU8451-VB can be used as a switching element to handle high current loads and provide efficient switching performance.
5. **Computer Power Supplies**:
- In computer power modules, the low on-resistance and high current capability of the FDU8451-VB make it ideal for use as a main switch, helping to improve power efficiency and stability, and supporting the power needs of high-performance computing devices.
FDU8451-VB MOSFET is suitable for the following fields and modules due to its superior performance and electrical parameters:
1. **Power Management Systems**:
- In power management applications, the low on-resistance and high drain current capability of FDU8451-VB make it very suitable for use as a high-efficiency switch. For example, it can be used as a high-current switch in a DC-DC converter to help reduce power loss and improve overall efficiency.
2. **Electric Vehicles**:
- In the power control system of electric vehicles, FDU8451-VB can be used in high-current drive applications such as battery management systems (BMS) and motor control modules. Its high current carrying capacity and low on-resistance can effectively support the high power requirements of electric vehicles.
3. **High-Power Switching**:
- The high current handling capability and low on-resistance of the FDU8451-VB make it suitable for high-power switching applications, such as in power switches and power modules for industrial equipment, ensuring efficient and stable current switching operations.
4. **Power Electronics Devices**:
- In various power electronic devices, such as power converters and inverters, the FDU8451-VB can be used as a switching element to handle high current loads and provide efficient switching performance.
5. **Computer Power Supplies**:
- In computer power modules, the low on-resistance and high current capability of the FDU8451-VB make it ideal for use as a main switch, helping to improve power efficiency and stability, and supporting the power needs of high-performance computing devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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